Light emitting diode and method of manufacturing the same, and light emitting device and method of manufacturing the light emitting device
A light emitting device including a conductive support substrate; an electrode layer on the conductive support substrate, and including side portions such that a center upper portion of the electrode layer protrudes upward from the conductive support substrate; a protective layer on the side portions of the electrode layer, the protective layer including an insulating material having a higher resistance than that of the electrode layer and a top surface of the protective layer is in line with a top surface of the protruding center upper portion of the electrode layer; and a light emitting structure including a second conductive semiconductor layer on the electrode layer and at least a portion of the protective layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer.
1. A light emitting diode includes:
a conductive support substrate;
a second electrode layer on the conductive support substrate and including a center portion and a peripheral portion surrounding the center portion;
a protective layer on the peripheral portion of the electrode layer;
a light emitting structure including a second conductive semiconductor layer on the second electrode layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer; and
a first electrode layer on the first conductive semiconductor layer,
wherein the center portion has a thickness different from that of the peripheral portion,
wherein the protection layer is directly in contact with the second conductive semiconductor layer, and
wherein the second conductive semiconductor layer includes edge portions extending outside of the light emitting structure, the edge portions are exposed upward and aligned with respective edges of the protective layer.
2. The light emitting device according to claim 1 , wherein a bottom surface of the second conductive semiconductor layer contacts the second electrode layer.
3. The light emitting device according to claim 1 , wherein the protective layer fills side portions of the second electrode layer and surrounds the second electrode layer.
4. The light emitting device according to claim 1 , wherein the second electrode layer serves as a p type electrode.
5. The light emitting device according to claim 4 , wherein the second electrode layer includes at least one of Ag, Ni, Al, Pt, and Au.
6. The light emitting device according to claim 1 , wherein the conductive support substrate includes at least one of Cu and Au.
7. The light emitting device according to claim 1 , wherein the center portion of the second electrode layer has a narrower width than that of the second conductive semiconductor layer.
8. The light emitting device according to claim 1 , wherein the center portion of the second electrode layer overlaps the active layer vertically.
9. The light emitting device according to claim 1 , wherein the center portion of the second electrode layer has a thickness greater than that of side portions of the second electrode layer.
10. The light emitting device according to claim 1 , wherein a width of the center portion of the second electrode layer is greater than a width of a top surface of the peripheral portion.
11. The light emitting device according to claim 1 , wherein the protective layer makes contact with a top surface and a side surface of the peripheral portion.
12. The light emitting device according to claim 1 , wherein a top surface of the center portion of the second electrode layer is in line with a top surface of the protective layer.
13. A light emitting device comprising:
a substrate formed with a first conductive pattern and a second conductive pattern isolated from the first conductive pattern;
a light emitting diode electrically connected to the first conductive pattern and the second conductive pattern on the substrate;
a guide ring surrounding the light emitting diode;
a first molding member in the guide ring; and
a second molding member on the first molding member,
wherein the light emitting diode includes:
a conductive support substrate;
an electrode layer on the conductive support substrate and including a center portion and a peripheral portion surrounding the center portion;
a protective layer on the peripheral portion of the electrode layer;
a second conductive semiconductor layer on the electrode layer;
an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer; and a first electrode layer on the first conductive semiconductor layer, wherein the center portion has a thickness different from that of the peripheral portion,
wherein the protection layer is directly in contact with the second conductive semiconductor layer, and
wherein the second conductive semiconductor layer includes edge portions extending outside of the light emitting structure, the edge portions are exposed upward and aligned with respective edges of the protective layer.
14. The light emitting device as claimed in claim 13 , wherein the first molding member further includes a phosphor.
15. A light emitting diode comprising: a conductive support substrate;
a reflective electrode layer on the conductive support substrate and including a center portion and a peripheral portion surrounding the center portion;
a protective layer on the peripheral portion of the reflective electrode layer; a second conductive semiconductor layer on the reflective layer; an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer; and a first electrode layer on the first conductive semiconductor layer,
wherein at least a portion of the peripheral portion of the reflective electrode layer directly contacts the protective layer,
wherein the center portion has a thickness different from that of the peripheral portion,
wherein the protection layer is directly in contact with the second conductive semiconductor layer, and
wherein the second conductive semiconductor layer includes edge portions extending outside of the light emitting structure, the edge portions are exposed upward and aligned with respective edges of the protective layer.