A light-emitting diode chip ( 1 ) with a semiconductor layer sequence ( 2 ) is described, which is contacted electrically by contacts ( 5 ) via a current spreading layer ( 3 ). The contacts ( 5 ) cover around 1%-8% of the surface of the semiconductor layer sequence ( 2 ). The contacts ( 5 ) consist for example of separate contact points ( 51 ), which are arranged at the nodes of a regular grid ( 52 ) with a grid constant of 12 μm. The current spreading layer ( 3 ) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.
1. A light-emitting diode chip with a semiconductor layer sequence, which comprises an active zone for generating electromagnetic radiation, with a current spreading layer, which adjoins the semiconductor layer sequence, with contacts, which electrically contact the current spreading layer, wherein the contacts cover between at least 1% and at most 8% of the surface of the current spreading layer, wherein the cross-sectional areas of the contacts increase with increasing distance from the semiconductor layer sequence, and wherein a free region is arranged centrally relative to a surface of the semiconductor layer sequence at an interface between the current spreading layer and the contacts, said free region being free from the contacts and, in said free region, there is a dielectric layer passing through the current spreading layer and directly adjoining the semiconductor layer sequence.
2. The light-emitting diode chip according to claim 1 , wherein the thermal conductivity of the contacts increases with increasing distance from the semiconductor layer sequence.
3. The light-emitting diode chip according to claim 1 , wherein the contacts are in conical form.
4. The light-emitting diode chip according to claim 1 , wherein the contacts are distributed uniformly over the surface of the current spreading layer.
5. A light-emitting diode chip according to claim 1 , wherein a spacing of neighbouring contacts is less than 30 gm.
6. The light-emitting diode chip according to claim 1 , wherein the contacts consist of separate contact points.
7. The light-emitting diode chip according to claim 1 , wherein the contacts are arranged at nodes of a regular grid.
8. The light-emitting diode chip according to claim 1 , wherein the current spreading layer comprises a thickness in the range from at least 10 nm to at most 60 nm.
9. The light-emitting diode chip according to claim 1 , wherein the current spreading layer contains indium-zinc oxide and has a thickness of at least 15 nm.
10. The light-emitting diode chip according to claim 1 , wherein the current spreading layer contains indium-tin oxide and has a thickness of at least 30 nm.
11. The light-emitting diode chip according to claim 1 , wherein the current spreading layer contains zinc oxide and has a thickness of at least 40 nm.
12. The light-emitting diode chip according to claim 1 , wherein the contacts pass through a dielectric layer.
13. The light-emitting diode chip according to claim 12 , wherein the contacts are connected electrically with a metallic layer, which closes off the dieletric layer in the direction of a carrier.
14. The light-emitting diode chip according to claim 12 , wherein said dielectric layer is an air layer.
15. The light-emitting diode chip according to claim 12 , wherein said dielectric layer comprises a Bragg mirror.
16. The light-emitting diode chip according to claim 1 , wherein the contacts cover between at least 2% and at most 4% of the surface of the current spreading layer.
17. The light-emitting diode chip according to claim 16 , wherein the thermal conductivity of the contacts increases with increasing distance from the semiconductor layer sequence.