Semiconductor body and method of producing a semiconductor body

1. A semiconductor body comprising:

an n-conductive semiconductor layer, wherein the n-conductive semiconductor layer contains an n-dopant and a further dopant, wherein the further dopant has a concentration of at least 10 16 cm −3 ;

a p-conductive semiconductor layer, wherein the p-conductive semiconductor layer contains a p-dopant; and

an active region and/or a tunnel contact between the p-conductive semiconductor layer and the n-conductive semiconductor layer, the active region intended for generating radiation.

2. The semiconductor body according to claim 1 , further comprising at least one further semiconductor layer, wherein the p-conductive semiconductor layer is covered by the at least one further semiconductor layer.

3. The semiconductor body according to claim 1 , wherein the p-conductive semiconductor layer is arranged between the active region and a carrier or a growth substrate.

4. The semiconductor body according to claim 3 , wherein the semiconductor body comprises a polarity-inverted structure with the following sequence of layers:

the growth substrate,

the p-conductive semiconductor layer on the growth substrate,

the active region on the p-conductive semiconductor layer, and

the n-conductive semiconductor layer on the active region.

5. The semiconductor body according to claim 1 , wherein the further dopant is configured with regard to material and concentration in such a way in the n-conductive semiconductor layer as to increase permeability of the n-conductive semiconductor layer to hydrogen.

6. The semiconductor body according to claim 1 , wherein the further dopant in the n-conductive semiconductor layer acts as an acceptor.

7. The semiconductor body according to claim 1 , wherein the further dopant is identical to the p-dopant of the p-conductive semiconductor layer.

8. The semiconductor body according to claim 1 , wherein the further dopant has a concentration in the n-conductive semiconductor layer between 1×10 17 cm −3 inclusive and 5×10 18 cm −3 inclusive.

9. The semiconductor body according claim 1 , wherein the further dopant has a concentration in the n-conductive semiconductor layer of at most 50% of the concentration of the n-dopant.

10. The semiconductor body according to claim 1 , wherein the semiconductor body comprises the active region and a further active region each of which is intended for generating radiation, wherein the n-conductive semiconductor layer is provided between the active region and the further active region.

11. The semiconductor body according to claim 1 , wherein the semiconductor body is based on a nitride compound semiconductor material.

12. The semiconductor body according to claim 1 , wherein the semiconductor body is part of luminescent diode chip.

13. The semiconductor body according to claim 1 , wherein the semiconductor body is part of a laser diode chip.

14. The semiconductor body according to claim 1 , wherein the semiconductor body is part of a thin film semiconductor chip.

15. A method of producing a semiconductor body, the method comprising:

forming an n-conductive semiconductor layer, wherein the n-conductive semiconductor layer contains an n-dopant and a further dopant, wherein the further dopant has a concentration of at least 10 16 cm −3 ;

forming a p-conductive semiconductor layer, wherein the p-conductive semiconductor layer contains a p-dopant; and

forming an active region and/or a tunnel contact between the p-conductive semiconductor layer and the n-conductive semiconductor layer, the active region intended for generating radiation.

16. The method according to claim 15 of producing comprising:

depositing a first semiconductor layer containing the p-dopant and hydrogen;

depositing a second semiconductor layer containing the n-dopant and the further dopant; and

activating the p-dopant of the first semiconductor layer to form the p-conductive semiconductor layer, wherein hydrogen from the first semiconductor layer passes through the n-conductive semiconductor layer.

17. The method according to claim 16 , wherein activating the p-dopant comprises activating the p-dopant thermally.

18. The method according to claim 16 , wherein forming the active region and/or the tunnel contact comprises depositing an active layer over the first semiconductor layer, the second semiconductor layer deposited over the active layer.

19. The method according to claim 16 , wherein the presence of the further dopant promotes the hydrogen from the semiconductor layer to pass through the n-conductive semiconductor layer.