Nitride semiconductor light-emitting device and method for fabrication thereof
View Patent ↗An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
1. A nitride semiconductor light-emitting device comprising:
a nitride semiconductor layer;
a resonator formed in the nitride semiconductor layer;
an adhesion layer formed at a facet of the resonator; and
a facet coat formed on the adhesion layer,
wherein
the nitride semiconductor layer and the adhesion layer have a hexagonal crystal, and
the adhesion layer and the facet coat are formed of compounds containing at least one element common thereto.
2. The nitride semiconductor light-emitting device of claim 1 ,
wherein the element common to the adhesion layer and the facet coat is one element selected from the group of Al, O, and N.
3. The nitride semiconductor light-emitting device of claim 1 ,
wherein the facet of the resonator and the adhesion layer make contact with each other.
4. The nitride semiconductor light-emitting device of claim 1 ,
wherein the adhesion layer and the facet coat make contact with each other.