Display device with metal oxidel layer and method for manufacturing the same

1. A display, comprising:

a substrate main body;

a gate electrode on the substrate main body;

a gate insulating layer on the gate electrode;

an oxide semiconductor layer on the gate electrode, the gate insulating layer being between the gate electrode and the oxide semiconductor;

a metal oxide film directly on the oxide semiconductor layer and including a plurality of openings exposing portions of the oxide semiconductor layer;

source and drain electrodes spaced apart from each other and in contact with the oxide semiconductor layer via the openings in the metal oxide film; and

an interlayer insulating layer between the metal oxide film and the source and drain electrodes.

2. The display as claimed in claim 1 , wherein the interlayer insulating layer has a plurality of contact holes exposing portions of the oxide semiconductor layer, the plurality of contact holes being aligned with openings in the metal oxide film.

3. The display as claimed in claim 1 , wherein:

a length of the oxide semiconductor layer is defined between two first outermost edges thereof, and

a length of the metal oxide film is defined between two second outermost edges thereof, the lengths of the oxide semiconductor layer and the metal oxide film being substantially the same, and first outermost edges being aligned with respective second outermost edges.

4. The display as claimed in claim 1 , wherein portions of the metal oxide film and portions of the source and drain electrodes in the openings of the metal oxide film are arranged to completely overlap the oxide semiconductor layer.

5. The display as claimed in claim 1 , wherein the oxide semiconductor layer includes oxygen and one or more of gallium (Ga), indium (In), zinc (Zn), hafnium (Hf), and tin (Sn).

6. The display as claimed in claim 1 , wherein the metal oxide film includes at least one of aluminum (Al), molybdenum (Mo), nickel (Ni), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), and an alloy thereof.

7. The display as claimed in claim 6 , wherein the metal oxide film has a thickness of about 50 Å to about 2000 Å.

8. A method of manufacturing a display, the method comprising:

forming a gate electrode on a substrate main body;

forming a gate insulating layer on the gate electrode;

sequentially stacking an oxide semiconductor layer and a metal oxide film on the gate insulating layer;

removing portions of the metal oxide film to form a plurality of openings exposing portions of the oxide semiconductor layer;

forming source and drain electrodes spaced apart from each other and in contact with the oxide semiconductor layer via the openings in the metal oxide film; and

forming an interlayer insulating layer between the metal oxide film and the source and drain electrodes.

9. The method as claimed in claim 8 , wherein sequentially stacking the oxide semiconductor layer and the metal oxide film includes:

stacking a metal film on the oxide semiconductor layer;

oxidizing the metal film to form the metal oxide film, such that the metal oxide film is directly on the oxide semiconductor layer; and

patterning the oxide semiconductor layer and the metal oxide film to have a same shape.

10. The method as claimed in claim 9 , wherein patterning the oxide semiconductor layer and the metal oxide film includes successively patterning the metal oxide film and the oxide semiconductor layer through an etching process.

11. The method as claimed in claim 9 , wherein patterning the oxide semiconductor layer and the metal oxide film includes arranging at least a portion of each of the patterned oxide semiconductor layer and the metal oxide film to overlap the gate electrode.

12. The method as claimed in claim 8 , further comprising forming a plurality of contact holes through the interlayer insulating layer, the plurality of contact holes and the plurality of openings in the metal oxide film being successively formed through an etching process.

13. The method as claimed in claim 12 , wherein forming the plurality of contact holes in the interlayer insulating layer is performed before forming the openings in the metal oxide, the metal oxide film having an etching electivity with respect to the interlayer insulating layer.

14. The method as claimed in claim 8 , wherein the oxide semiconductor layer is formed to include one or more of gallium (Ga), indium (In), zinc (Zn), hafnium (Hf), and tin (Sn), and the metal oxide film is formed of one or more of aluminum (Al), molybdenum (Mo), nickel (Ni), silver (Ag), chromium (Cr), titanium (Ti), and tantalum (Ta), and an alloy thereof.

15. The method as claimed in claim 9 , wherein oxidizing the metal film includes applying heat to the metal film or using plasma oxidization, the metal oxide film having a thickness of about 50 Å to about 2000 Å.

16. The method as claimed in claim 9 , wherein sequentially stacking the oxide semiconductor layer and metal film includes successively depositing the oxide semiconductor layer and the metal film under a vacuum atmosphere.