Pattern forming method and manufacturing method of semiconductor device
View Patent ↗A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.
1. A semiconductor device manufacturing method comprising:
preparing a first substrate above which a multi-layered film having a photosensitive film is formed;
supplying a first washing liquid to an entire top surface of the multi-layered film before emitting energy rays to the photosensitive film; and
developing the photosensitive film in order to form a photosensitive film pattern which corresponds to a latent image formed on the photosensitive film by emitting energy rays to the photosensitive film,
wherein a planarization of the photosensitive film above the substrate is unchanged by the supplying the first washing liquid to the entire top surface of the multi-layered film.
2. The semiconductor device manufacturing method according to claim 1 , wherein the emitting energy rays to the photosensitive film is performed by using an immersion type exposure.
3. The semiconductor device manufacturing method according to claim 1 , wherein the first washing liquid is a pure water.
4. The semiconductor device manufacturing method according to claim 1 , wherein the multi-layered film comprises an anti-reflection film below the photosensitive film.
5. The semiconductor device manufacturing method according to claim 1 , further comprising drying the top surface of the multi-layered film after the supplying the first washing liquid to the entire top surface of the multi-layered film before the emitting energy rays to the photosensitive film.
6. The semiconductor device manufacturing method according to claim 1 , wherein the supplying a first washing liquid to the entire top surface of the multi-layered film is performed while the first substrate being rotated.
7. The semiconductor device manufacturing method according to claim 1 , further comprising heating the first substrate after the supplying the first washing liquid to the entire top surface of the multi-layered film before the emitting energy rays to the photosensitive film.
8. The semiconductor device manufacturing method according to claim 1 , wherein the photosensitive film is a chemically amplified resist film which contains an optical acid generating liquid.
9. The semiconductor device manufacturing method according to claim 2 , wherein the photosensitive film is a chemically amplified resist film which contains an optical acid generating liquid.
10. The semiconductor device manufacturing method according to claim 8 , wherein the chemically amplified resist has reactivity with ArF light.
11. The semiconductor device manufacturing method according to claim 9 , wherein the chemically amplified resist has reactivity with ArF light.
12. The semiconductor device manufacturing method according to claim 8 , wherein the multi-layered film comprises an anti-reflection film below the photosensitive film.
13. The semiconductor device manufacturing method according to claim 9 , wherein the multi-layered film comprises an anti-reflection film below the photosensitive film.