Organic light emitting display apparatus having a light conversion layer

1. An organic light emitting display, comprising:

a substrate;

a light conversion layer on the substrate, the light conversion layer including an oxide semiconductor that has a refractive index higher than that of silicon oxide;

a passivation layer covering the light conversion layer;

a first electrode on the passivation layer;

an intermediate layer on the first electrode, the intermediate layer including an organic emission layer; and

a second electrode on the intermediate layer,

wherein the intermediate layer includes a first region overlapping the first electrode, and the light conversion layer overlaps the first region of the intermediate layer and wherein the light conversion layer is formed in a predetermined pattern so as to include a plurality of through holes.

2. An organic light emitting display apparatus, comprising:

a substrate;

a light conversion layer on the substrate, the light conversion layer including an oxide semiconductor that has a refractive index higher than that of silicon oxide;

a passivation layer covering the light conversion layer;

a first electrode on the passivation layer;

an intermediate layer on the first electrode, the intermediate layer including an organic emission layer;

a second electrode on the intermediate layer;

a thin film transistor disposed between the passivation layer and the substrate, the thin film transistor being electrically connected to the first electrode, the thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode; and

an etch stopper between the active layer, the source electrode, and the drain electrode.

3. The organic light emitting display apparatus as claimed in claim 2 , wherein the etch stopper is between the light conversion layer and the passivation layer.

4. The organic light emitting display apparatus as claimed in claim 2 , wherein the etch stopper includes silicon oxide.

5. An organic light emitting display apparatus, comprising:

a substrate;

a light conversion layer on the substrate, the light conversion layer including an oxide semiconductor;

a passivation layer covering the light conversion layer;

a first electrode on the passivation layer;

an intermediate layer on the first electrode, the intermediate layer including an organic emission layer;

a second electrode on the intermediate layer; and

a thin film transistor disposed between the passivation layer and the substrate, the thin film transistor being electrically connected to the first electrode, the thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode, wherein:

an etch stopper is between the light conversion layer and the passivation layer, and

the etch stopper includes a plurality of through holes, the through holes exposing portions of the light conversion layer.

6. An organic light emitting display apparatus, comprising:

a substrate;

a light conversion layer on the substrate, the light conversion layer including an oxide semiconductor;

a passivation layer covering the light conversion layer;

a first electrode on the passivation layer;

an intermediate layer on the first electrode, the intermediate layer including an organic emission layer;

a second electrode on the intermediate layer;

a thin film transistor disposed between the passivation layer and the substrate, the thin film transistor being electrically connected to the first electrode, the thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode; and

a light blocking layer disposed between the substrate and the light conversion layer, the light blocking layer blocking light from flowing into regions around the light conversion layer.

7. The organic light emitting display apparatus as claimed in claim 6 , wherein the light blocking layer includes a through hole that faces the light conversion layer.

8. The organic light emitting display apparatus as claimed in claim 6 , wherein the light blocking layer is formed of a material used to form the gate electrode.