IP Library Granted Patent US 8,389,984
Granted Patent B2
US 8,389,984 · App. 12/926,518 · Granted Mar 5, 2013

Organic light emitting diode display device and method of fabricating the same

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Quick Facts
Patent No.
US 8,389,984
App. No.
12/926,518
Granted
Mar 5, 2013
Kind
B2
Abstract

An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.

Claims (41)

1. An organic light emitting diode display device, comprising:

a substrate, the substrate including a pixel part and a circuit part;

a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate;

a gate insulating layer on an entire surface of the substrate;

gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively;

source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively;

a first electrode connected to the source/drain electrodes of the first semiconductor layer;

an organic layer on the first electrode;

a second layer on the organic layer; and

a metal catalyst layer under the first semiconductor layer.

2. The organic light emitting diode display device as claimed in claim 1 , wherein:

the first semiconductor layer is a driving thin film transistor semiconductor layer, and

the second semiconductor layer is a switching thin film transistor semiconductor layer.

3. The organic light emitting diode display device as claimed in claim 1 , wherein the first semiconductor layer and the second semiconductor layer have different thicknesses.

4. The organic light emitting diode display device as claimed in claim 1 , wherein:

the first semiconductor layer includes a polysilicon layer crystallized by a metal catalyst, and

the second semiconductor layer includes a polysilicon layer crystallized by solid phase crystallization.

5. The organic light emitting diode display device as claimed in claim 1 , wherein the first semiconductor layer includes a metal catalyst.

6. The organic light emitting diode display device as claimed in claim 1 , wherein:

the first semiconductor layer includes a plurality of polysilicon layers, and the second semiconductor layer is a single polysilicon layer.

7. An organic light emitting diode display device, comprising:

a substrate, the substrate including a pixel part and a circuit part;

a plurality of gate electrodes on the pixel part of the substrate;

a gate insulating layer on an entire surface of the substrate;

a first semiconductor layer and a second semiconductor layer on the gate electrodes;

source/drain electrodes, the source/drain electrodes being electrically connected to the first and second semiconductor layers, respectively;

a first electrode, the first electrode being connected to the source/drain electrodes of the first semiconductor layer;

an organic layer on the first electrode;

a second electrode on the organic layer; and

a metal catalyst layer under the first semiconductor layer.

8. The organic light emitting diode display device as claimed in claim 7 , wherein:

the first semiconductor layer is a driving thin film transistor semiconductor layer, and

the second semiconductor layer is a switching thin film transistor semiconductor layer.

9. The organic light emitting diode display device as claimed in claim 7 , wherein the first semiconductor layer and the second semiconductor layer have different thicknesses.

10. The organic light emitting diode display device as claimed in claim 7 , wherein:

the first semiconductor layer includes a polysilicon layer crystallized by a metal catalyst, and

the second semiconductor layer includes a polysilicon layer crystallized by solid phase crystallization.

11. The organic light emitting diode display device as claimed in claim 7 , wherein the first semiconductor layer includes a metal catalyst.

12. The organic light emitting diode display device as claimed in claim 7 , wherein:

the first semiconductor layer includes a plurality of polysilicon layers, and

the second semiconductor layer is a single polysilicon layer.

Assignments (1)
MERGER Recorded Oct 16, 2012
From: SAMSUNG MOBILE DISPLAY CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029227/0419 →