Organic light emitting diode device having an ytterbium alloy electrode

1. An organic light emitting diode device, comprising

a first electrode;

a second electrode facing the first electrode; and

an emitting layer interposed between the first electrode and the second electrode,

wherein:

the first electrode includes an ytterbium (Yb) alloy represented by the following Chemical Formula 1:

Yb-M  (1),

in Chemical Formula 1, M is a metal including at least one of silver (Ag), calcium (Ca), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), molybdenum (Mo), ruthenium (Ru), indium (In), and tungsten (W), and

the ytterbium alloy includes Yb and M at a Yb:M ratio of 1:2 to about 1:6.

2. The organic light emitting diode device as claimed in claim 1 , wherein the first electrode has a light transmittance of about 40% or greater in a visible ray region.

3. The organic light emitting diode device as claimed in claim 2 , wherein the first electrode has a light transmittance of about 40% to about 95% in a visible ray region.

4. The organic light emitting diode device as claimed in claim 1 , wherein the first electrode has a sheet resistance of about 500 Ω/cm 2 or less at a thickness of about 50 Å to about 500 Å.

5. The organic light emitting diode device as claimed in claim 4 , wherein the first electrode has a sheet resistance of about 1 Ω/cm 2 to about 500 Ω/cm 2 or less at a thickness of about 50 Å to about 500 Å.

6. The organic light emitting diode device as claimed in claim 1 , wherein the first electrode has a thickness of about 50 Å to about 500 Å.

7. The organic light emitting diode device as claimed in claim 1 , wherein the ytterbium alloy includes an ytterbium-silver alloy (YbAg).

8. The organic light emitting diode device as claimed in claim 1 , wherein the second electrode includes a transparent conductive layer.

9. The organic light emitting diode device as claimed in claim 1 , wherein the second electrode includes a reflective layer and the emitting layer is configured to emit white light.

10. The organic light emitting diode device as claimed in claim 9 , wherein the second electrode further includes a transparent conductive layer.

11. An organic light emitting diode device, comprising:

a first electrode;

a second electrode facing the first electrode; and

an emitting layer interposed between the first electrode and the second electrode, wherein:

the first electrode includes:

a first layer including an ytterbium (Yb) alloy represented by the following Chemical Formula 1:

Yb-M  (1),

in Chemical Formula 1, M is a metal including at least one of silver (Ag), calcium (Ca), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), molybdenum (Mo), ruthenium (Ru), indium (In), and tungsten (W), and

a second layer including at least one of silver (Ag), calcium (Ca), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), molybdenum (Mo), ruthenium (Ru), indium (In), tungsten (W), and alloys thereof, and

the first electrode has a light transmittance of about 40% or greater in a visible ray region.

12. The organic light emitting diode device as claimed in claim 11 , wherein the first layer has a thickness of about 5 Å to about 200 Å and the second layer has a thickness of about 50 Å to about 300 Å.

13. The organic light emitting diode device as claimed in claim 11 , wherein the first electrode has a sheet resistance of about 500 Ω/cm 2 or less at a thickness of about 50 Å to about 500 Å.

14. The organic light emitting diode device as claimed in claim 11 , wherein the ytterbium alloy includes an ytterbium-silver alloy (YbAg).

15. The organic light emitting diode device as claimed in claim 14 , wherein the first layer includes the ytterbium-silver alloy (YbAg) and the second layer includes silver (Ag) or a silver alloy.

16. An organic light emitting diode device, comprising

a first electrode;

a second electrode facing the first electrode; and

an emitting layer interposed between the first electrode and the second electrode,

wherein:

the first electrode includes an ytterbium (Yb) alloy represented by the following Chemical Formula 1:

Yb-M  (1),

in Chemical Formula 1, M is a metal including at least one of silver (Ag), calcium (Ca), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), molybdenum (Mo), ruthenium (Ru), indium (In), and tungsten (W), and

the ytterbium alloy includes Yb and M at a Yb:M ratio of 1:2 to about 1:20.

17. The organic light emitting diode device as claimed in claim 16 , wherein the first electrode has a light transmittance of about 40% or greater in a visible ray region.

18. The organic light emitting diode device as claimed in claim 16 , wherein the first electrode has a sheet resistance of about 500 Ω/cm 2 or less at a thickness of about 50 Å to about 500 Å.

19. The organic light emitting diode device as claimed in claim 16 , wherein the first electrode has a thickness of about 50 Å to about 500 Å.

20. The organic light emitting diode device as claimed in claim 16 , wherein the ytterbium alloy includes an ytterbium-silver alloy (YbAg).