Semiconductor composite apparatus, method for manufacturing the semiconductor composite apparatus, LED head that employs the semiconductor composite apparatus, and image forming apparatus that employs the LED head
View Patent ↗A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.
1. A method of manufacturing a semiconductor composite apparatus, comprising the steps of:
preparing a semiconductor thin film;
preparing a laminated substrate that includes a high-melting-point metal layer on a surface of a base substrate and a low-melting-point metal layer formed in contact with the high-melting-point metal layer;
placing the semiconductor thin film directly on the low-melting-point metal layer; and
heating the low-melting-point metal layer to melt at a temperature higher than a melting point of the low-melting-point metal layer but lower than a melting point of the high-melting-point metal layer.
2. The method according to claim 1 , wherein said low-melting-point metal layer is selected from the group consisting of In, Sn, Bi, Ce, and Tl.
3. The method according to claim 1 , wherein said high-melting-point metal layer is formed of one selected from the group consisting of Au, Pd, and Ni.
4. The method according to claim 1 , wherein said semiconductor thin film includes light emitting elements formed therein.
5. The method according to claim 1 , wherein the low-melting-point metal layer provides adhesion to the semiconductor thin film to minimize a contact resistance between the low-melting-point metal layer and the semiconductor thin film.
6. The method according to claim 1 , wherein the low-melting-point metal layer melts to react with the high-melting-point metal, producing an alloy layer of the low-melting-point metal and the high-melting-point metal.
7. The method according to claim 6 , wherein the high-melting-point metal layer is sandwiched between said alloy layer and said base substrate; and
wherein a portion of said high-melting-point metal layer, which forms said high-melting-point metal layer remains unreacted with the low-melting-point metal.
8. The method according to claim 7 , wherein the alloy layer has a higher melting point than the low-melting-point metal layer.
9. The method according to claim 7 , wherein the alloy layer contains one selected from the group consisting of Au x In y , Pd x In y , and Ni x In y .
10. The method according to claim 1 , wherein the semiconductor thin film further includes:
an AlGaAs layer including a first side facing the low-melting-point metal layer and a second side opposite to the first side; and
a GaAs layer on the first side of the AlGaAs layer.
11. The method according to claim 1 , wherein the semiconductor thin film further includes:
an AlGaAs layer including a first side facing the low-melting-point metal layer and a second side opposite to the first side; and
a GaAs layer on the second side of the AlGaAs layer.