IP Library › Granted Patent US 8,461,935
Granted Patent B2
US 8,461,935 · App. 12/927,960 · Granted Jun 11, 2013

Hybrid system having a non-MEMS device and a MEMS device

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Quick Facts
Patent No.
US 8,461,935
App. No.
12/927,960
Granted
Jun 11, 2013
Kind
B2
Abstract

A hybrid system having a non-MEMS device and a MEMS device is described. The apparatus includes a non-MEMS device and an integrated circuit including a MEMS device, the integrated circuit formed on a substrate. The integrated circuit includes a control circuit for the non-MEMS device and a MEMS control circuit for the MEMS device.

Claims (124)

1. An apparatus, comprising:

a package;

a substrate housed in said package;

a non-MEMS device housed in said package; and

an integrated circuit coupled to the substrate, the integrated circuit comprising:

a plurality of devices formed in a semiconductor layer;

a MEMS device;

a MEMS control circuit, formed in a first portion of said plurality of semiconductor devices, for said MEMS device; and

a non-MEMS device control circuit for said non-MEMS device, formed in a second portion of said plurality of semiconductor devices;

where the non-MEMS device is configured to produce an output that is at least one of an oscillation output, temperature sensing output, pressure sensing output, chemical sensing output, inertial sensing output, or a combination thereof.

2. The apparatus of claim 1 , wherein the integrated circuit is disposed above said substrate.

3. The apparatus of claim 1 , wherein said non-MEMS device and said integrated circuit are each disposed above said substrate.

4. The apparatus of claim 1 , wherein said semiconductor layer is disposed between said substrate and said MEMS device.

5. The apparatus of claim 1 , wherein said MEMS device is disposed between said substrate and said semiconductor layer.

6. The apparatus of claim 1 , wherein said non-MEMS device is a crystal-based device.

7. The apparatus of claim 1 , wherein said MEMS control circuit comprises a MEMS oscillator circuit for generating an oscillation output.

8. The apparatus of claim 1 , wherein said MEMS control circuit comprises a MEMS temperature sensor circuit for generating a temperature output.

9. The apparatus of claim 1 , wherein said MEMS control circuit comprises a MEMS pressure sensor circuit for generating a pressure output.

10. The apparatus of claim 1 , wherein said MEMS control circuit comprises a MEMS inertial sensor circuit for generating an inertial output.

11. The apparatus of claim 1 , wherein said MEMS device is for detecting an environmental change.

12. The apparatus of claim 1 , wherein said non-MEMS device is adjacent to said substrate.

13. The apparatus of claim 12 , wherein the integrated circuit is flip-chip bonded to the substrate.

14. The apparatus of claim 12 , wherein the integrated circuit is coupled by wire bonding to the substrate.

15. The apparatus of claim 1 , wherein said non-MEMS device is a crystal, and wherein said control circuit for said non-MEMS device is a crystal control circuit.

16. The apparatus of claim 15 , wherein the integrated circuit is disposed above said substrate.

17. The apparatus of claim 15 , wherein said crystal and said integrated circuit are each disposed above said substrate.

18. The apparatus of claim 15 , wherein said crystal is above said substrate, and wherein said MEMS device is disposed between said semiconductor layer and said crystal.

19. The apparatus of claim 15 , wherein said crystal is above said substrate, and wherein said MEMS device is disposed between said substrate and said semiconductor layer.

20. The apparatus of claim 15 , wherein said crystal is adjacent to said substrate.

21. The apparatus of claim 15 , wherein said crystal comprises a material selected from the group consisting of quartz and a ceramic material.

22. The apparatus of claim 15 , wherein said MEMS control circuit is coupled to said crystal control circuit.

23. The apparatus of claim 22 , wherein said MEMS control circuit comprises a MEMS oscillator circuit for outputting an oscillation output into said crystal control circuit.

24. The apparatus of claim 22 , wherein said MEMS control circuit comprises a MEMS pressure sensor circuit for outputting a pressure output into said crystal control circuit.

25. The apparatus of claim 22 , wherein said MEMS control circuit comprises a MEMS inertial sensor circuit for outputting an inertial output into said crystal control circuit.

26. The apparatus of claim 22 , wherein said crystal control circuit is a crystal oscillation circuit for outputting a crystal oscillation output into said MEMS control circuit.

27. The apparatus of claim 22 , wherein said MEMS control circuit comprises a MEMS temperature sensor circuit for outputting a temperature output into said crystal control circuit.

28. The apparatus of claim 27 , wherein said integrated circuit further comprises:

a MEMS oscillator circuit, formed in a third portion of said plurality of semiconductor devices, for generating an oscillation output.

29. The apparatus of claim 22 , wherein said MEMS control circuit provides an output that is coupled as an input to said crystal control circuit.

30. The apparatus of claim 29 , wherein said MEMS control circuit comprises a MEMS resonator.

31. An apparatus, comprising:

a package;

a substrate housed in said package;

a non-MEMS device housed in said package; and

an integrated circuit coupled to the substrate, the integrated circuit comprising:

a plurality of devices formed in a semiconductor layer;

a MEMS device;

a MEMS control circuit, formed in a first portion of said plurality of semiconductor devices, for said MEMS device; and

a non-MEMS device control circuit for said non-MEMS device, formed in a second portion of said plurality of semiconductor devices;

wherein said MEMS control circuit comprises a MEMS temperature sensor circuit for generating a temperature output, said integrated circuit further comprising: a MEMS oscillator circuit, formed in a third portion of said plurality of semiconductor devices, for generating an oscillation output.

32. A method for crystal output compensation, comprising:

generating an output from a MEMS control circuit;

generating an output from a crystal control circuit, wherein said crystal control circuit is coupled to said MEMS control circuit;

inputting said output from said MEMS control circuit to said crystal control circuit; and

modifying said output from said crystal control circuit based on said output from said MEMS control circuit.

33. An apparatus, comprising:

a non-MEMS device; and

an integrated circuit formed on a substrate, said integrated circuit comprising:

a control circuit for said non-MEMS device;

a MEMS device; and

a MEMS control circuit for said MEMS device;

wherein said MEMS device is selected from the group consisting of a MEMS resonator, a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch;

wherein said MEMS device is a MEMS resonator, and wherein said MEMS control circuit is a MEMS frequency circuit.

34. The apparatus of claim 33 , wherein said MEMS frequency circuit is a MEMS oscillator circuit.

35. An apparatus, comprising:

a non-MEMS device; and

an integrated circuit formed on a substrate, said integrated circuit comprising:

a control circuit for said non-MEMS device;

a MEMS device; and

a MEMS control circuit for said MEMS device;

where the non-MEMS device is configured to produce an output that is at least one of an oscillation output, temperature sensing output, pressure sensing output, chemical sensing output, inertial sensing output, or a combination thereof.

36. The apparatus of claim 35 , wherein said non-MEMS device is selected from the group consisting of a crystal, a thermistor, an accelerometer and a chemical sensor, and wherein said MEMS device is selected from the group consisting of a MEMS resonator, a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

37. The apparatus of claim 35 , wherein said non-MEMS device is selected from the group consisting of a crystal, a thermistor, an accelerometer and a chemical sensor, and wherein said MEMS device is selected from the group consisting of a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

38. The apparatus of claim 35 , wherein said non-MEMS device is a crystal-based device.

39. The apparatus of claim 35 , wherein said MEMS device is for detecting an environmental change.

40. The apparatus of claim 35 , wherein said MEMS control circuit is coupled to said control circuit for said non-MEMS device.

41. The apparatus of claim 40 , wherein said non-MEMS device is a crystal, and wherein said control circuit for said non-MEMS device is a crystal oscillator circuit for outputting a crystal oscillation output into said MEMS control circuit.

42. The apparatus of claim 35 , wherein said MEMS device is selected from the group consisting of a MEMS resonator, a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

43. The apparatus of claim 35 , wherein said integrated circuit comprises a plurality of semiconductor devices.

44. The apparatus of claim 35 , wherein said non-MEMS device is a crystal and said control circuit for said non-MEMS device is a crystal control circuit, and wherein said MEMS control circuit provides an output that is coupled as an input to said crystal control circuit.

45. The apparatus of claim 35 , wherein said MEMS device is selected from the group consisting of a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

46. The apparatus of claim 35 , wherein said non-MEMS device is selected from the group consisting of a crystal, a thermistor, an accelerometer and a chemical sensor.

47. The apparatus of claim 46 , wherein said non-MEMS device is a crystal, and wherein said crystal and said integrated circuit are housed together in a single package.

48. The apparatus of claim 46 , wherein said non-MEMS device is a crystal, and wherein said crystal comprises a material selected from the group consisting of quartz and a ceramic material.

49. An apparatus, comprising:

a package;

a substrate housed in said package;

a non-MEMS device housed in said package; and

an integrated circuit comprising:

a plurality of devices formed in a semiconductor layer disposed above said substrate;

a MEMS device disposed above said substrate;

a MEMS control circuit, formed in a first portion of said plurality of semiconductor devices, for said MEMS device; and

a non-MEMS device control circuit for said non-MEMS device, formed in a second portion of said plurality of semiconductor devices;

where the non-MEMS device is configured to produce an output that is at least one of an oscillation output, temperature sensing output, pressure sensing output, chemical sensing output, inertial sensing output, or a combination thereof.

50. The apparatus of claim 49 , wherein said MEMS device is for detecting an environmental change.

51. The apparatus of claim 49 , wherein said non-MEMS device is a crystal-based device.

52. The apparatus of claim 51 , wherein said crystal-based device is above said substrate, and wherein said MEMS device is disposed between said semiconductor layer and said crystal-based device.

53. The apparatus of claim 51 , wherein said crystal-based device is above said substrate, and wherein said MEMS device is disposed between said substrate and said semiconductor layer.

54. The apparatus of claim 51 , wherein said crystal is adjacent to said substrate.

55. The apparatus of claim 51 , wherein said MEMS control circuit is coupled to said non-MEMS device control circuit.

56. The apparatus of claim 55 , wherein said crystal control circuit is a crystal oscillation circuit for outputting a crystal oscillation output into said MEMS control circuit.

57. The apparatus of claim 55 , wherein said non-MEMS device control circuit is a crystal control circuit and said MEMS control circuit provides an output that is coupled as an input to said crystal control circuit.

58. The apparatus of claim 49 , wherein said non-MEMS device is a crystal, and wherein said non-MEMS device control circuit for said non-MEMS device is a crystal control circuit.

59. The apparatus of claim 58 , wherein said crystal is adjacent to said substrate.

60. The apparatus of claim 58 , wherein said MEMS control circuit is coupled to said crystal control circuit.

61. The apparatus of claim 60 , wherein said crystal comprises a material selected from the group consisting of quartz and a ceramic material.

62. The apparatus of claim 60 , wherein said MEMS control circuit provides an output that is coupled as an input to said crystal control circuit.

63. An apparatus, comprising:

a package;

a non-MEMS device housed in said package, wherein said non-MEMS device is for producing a first output having a function;

a MEMS device housed in said package, wherein said MEMS device is for producing an second output having said function;

a control circuit housed in said package, wherein said control circuit is for said non-MEMS device; and

a MEMS control circuit housed in said package, wherein said MEMS control circuit is for said MEMS device;

wherein said function is selected from the group consisting of oscillation, temperature sensing, pressure sensing, chemical sensing and inertial sensing.

64. The apparatus of claim 63 , wherein said non-MEMS device is selected from the group consisting of a crystal, a thermistor, an accelerometer and a chemical sensor, and wherein said MEMS device is selected from the group consisting of a MEMS resonator, a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

65. The apparatus of claim 63 , wherein said non-MEMS device is selected from the group consisting of a crystal, a thermistor, an accelerometer and a chemical sensor, and wherein said MEMS device is selected from the group consisting of a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

66. The apparatus of claim 63 , wherein said function is selected from the group consisting of oscillation, temperature sensing, pressure sensing and inertial sensing.

67. The apparatus of claim 63 , wherein said function is selected from the group consisting of temperature sensing, pressure sensing and inertial sensing.

68. The apparatus of claim 63 , wherein said control circuit for said non-MEMS device is coupled to said MEMS control circuit for said MEMS device.

69. The apparatus of claim 63 , wherein said non-MEMS device is selected from the group consisting of a crystal, a thermistor, an accelerometer and a chemical sensor.

70. The apparatus of claim 63 , wherein said MEMS device is selected from the group consisting of a MEMS resonator, a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

71. The apparatus of claim 63 , wherein said MEMS device is selected from the group consisting of a MEMS temperature sensor, a MEMS inertial sensor, a MEMS pressure sensor, and a MEMS switch.

72. The apparatus of claim 63 , wherein said non-MEMS device is a crystal-based device.

73. The apparatus of claim 72 , wherein said MEMS control circuit provides an output that is coupled as an input to said control circuit for said non-MEMS device.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 12, 2011
From: SILICON LABS SC, INC.
To: SILICON LABORATORIES INC.
Reel/Frame 025624/0190 →