IP Library Granted Patent US 8,465,556
Granted Patent B2
US 8,465,556 · App. 12/928,001 · Granted Jun 18, 2013

Method of forming a solid state cathode for high energy density secondary batteries

Inventor: Isaiah O. Oladeji (Gotha, FL)
Assignee: Sisom Thin Films LLC
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Quick Facts
Patent No.
US 8,465,556
App. No.
12/928,001
Granted
Jun 18, 2013
Kind
B2
Abstract

A method for making a solid state cathode comprises the following steps: forming an alkali free first solution comprising at least one transition metal and at least two ligands; spraying this solution onto a substrate that is heated to about 100 to 400° C. to form a first solid film containing the transition metal(s) on the substrate; forming a second solution comprising at least one alkali metal, at least one transition metal, and at least two ligands; spraying the second solution onto the first solid film on the substrate that is heated to about 100 to 400° C. to form a second solid film containing the alkali metal and at least one transition metal; and, heating to about 300 to 1000° C. in a selected atmosphere to react the first and second films to form a homogeneous cathode film. The cathode may be incorporated into a lithium or sodium ion battery.

Claims (28)

1. A method of forming a solid state cathode comprising the steps of:

a) forming a generally planar substrate;

b) forming a substantially alkali-free first solution comprising at least one transition metal and at least two ligands;

c) spraying said first solution onto said substrate while maintaining said substrate at a temperature between about 100 and 400° C. to form a first solid film containing said transition metal on said substrate;

d) forming a second solution comprising at least one alkali metal, at least one transition metal, and at least two ligands;

e) spraying said second solution onto said first solid film on said substrate while maintaining said substrate at a temperature between about 100 and 400° C. to form a second solid film containing said alkali metal and at least one transition metal; and,

f) heating to a temperature between about 300 and 1000° C. in a selected atmosphere to react said first and second films to form a homogeneous cathode film.

2. The method of claim 1 wherein said first solution comprises:

at least one transition metal selected from the group consisting of: Mn, Co, Ni, Al, Fe, and Sn; and,

at least two ligands selected from the group consisting of: urea, acetic acid, citric acid, hydrochloric acid, sulfuric acid, nitric acid, lithium citrate, sodium citrate, triethanolamine, ethylenediamine, ammonia, nitrilotriacetic acid, phosphoric acid, and acetonitrile.

3. The method of claim 1 wherein said second solution comprises:

an alkali metal selected from the group consisting of: Li and Na;

at least one transition metal selected from the group consisting of: Mn, Co, Ni, Al, Fe, and Sn; and,

at least two ligands selected from the group consisting of: urea, acetic acid, citric acid, hydrochloric acid, sulfuric acid, nitric acid, lithium citrate, sodium citrate, triethanolamine, ethylenediamine, ammonia, nitrilotriacetic acid, and acetonitrile.

4. The method of claim 1 wherein said substrate is selected from the group consisting of: stainless steel foil, nickel foil, nickel-clad copper foil, and aluminum foil.

5. The method of claim 1 wherein said homogeneous cathode film comprises a compound selected from the group consisting of:

LiMn 2-x M1 x O 4 where M1 is selected from the group consisting of Al, Sn, Zn, and Fe, and 0≦x≦0.05;

LiCo 1-x M2 x O 2 where M2 is selected from the group consisting of Ni and Al, and 0≦x≦0.5;

LiNi 1-x M3 x O 2 where M3 is selected from the group consisting of Co and Al, and 0≦x≦0.5;

LiMn x Ni y Co z Al t O 2 where x+y+z+t=1, and 0≦(x, y, z, and t)≦1;

LiM4PO 4 where M4 is selected from the group consisting of Fe, Co, Ni, and Mn;

NaMn 2-x M5 x O 4 where M5 is selected from the group consisting of Al, Sn, Zn, and Fe, and 0≦x≦0.05;

NaCo 1-x M6 x O 2 where M6 is selected from the group consisting of Ni and Al, and 0≦x≦0.5;

NaNi 1-x M7 x O 2 where M7 is selected from the group consisting of Co and Al, and 0≦x≦0.5;

NaMn x Ni y Co z Al t O 2 where x+y+z+t=1, and 0≦(x, y, z, and t)≦1; and,

NaM8PO 4 where M8 is selected from the group consisting of Fe, Co, Ni, and Mn.

6. The method of claim 1 further comprising the step of calendaring to increase the density of said deposited films prior to heating step (f).

7. The method of claim 6 wherein said calendaring comprises applying a mechanical pressure of at least 2000 psi.

Assignments (4)
CHANGE OF NAME Recorded Jan 27, 2023
From: QUANTUMSCAPE SUBSIDIARY, INC.
To: QUANTUMSCAPE BATTERY, INC.
Reel/Frame 062538/0841 →
CHANGE OF NAME Recorded Jan 17, 2023
From: QUANTUMSCAPE CORPORATION
To: QUANTUMSCAPE SUBSIDIARY, INC.
Reel/Frame 062403/0443 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 13, 2014
From: SISOM THIN FILMS LLC
To: QUANTUMSCAPE CORPORATION
Reel/Frame 032073/0026 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 14, 2012
From: OLADEJI, ISAIAH O.
To: SISOM THIN FILMS, LLC
Reel/Frame 029405/0386 →
Continuity (1)
Related Publication 20120137508A1 · Jun 7, 2012