Monolithic integration of silicon and group III-V devices
View Patent ↗Disclosed is a monolithically integrated silicon and group III-V device that includes a group III-V transistor formed in a III-V semiconductor body disposed over a silicon substrate. At least one via extends through the III-V semiconductor body to couple at least one terminal of the group III-V transistor to a silicon device formed in the silicon substrate. The silicon device can be a Schottky diode, and the group III-V transistor can be a GaN HEMT. In one embodiment an anode of the Schottky diode is formed in the silicon substrate. In another embodiment, the anode of the Schottky diode is formed in a lightly doped epitaxial silicon layer atop the silicon substrate. In one embodiment a parallel combination of the Schottky diode and the group III-V transistor is formed, while in another embodiment is series combination is formed.
1. A monolithically integrated silicon and group III-V device comprising:
a group III-V transistor formed in a group III-V semiconductor body disposed over a silicon substrate;
at least one via extending through said group III-V semiconductor body to couple at least one terminal of said group III-V transistor to a silicon device formed in said silicon substrate;
said group III-V transistor and said silicon device configured to be one of coupled in series and coupled in parallel with one another, wherein said silicon device is not electrically connected to a gate of said group III-V transistor.
2. The monolithically integrated silicon and group III-V device of claim 1 wherein said silicon device comprises a Schottky diode.
3. The monolithically integrated silicon and group III-V device of claim 1 wherein said silicon device comprises a Schottky diode, and said group III-V transistor is a GaN HEMT.
4. The monolithically integrated silicon and group III-V device of claim 1 wherein said silicon device comprises a Schottky diode, and said group III-V transistor is a GaN HEMT, and wherein an anode of said Schottky diode is formed in said silicon substrate.
5. The monolithically integrated silicon and group III-V device of claim 4 wherein said anode of said Schottky diode is formed in a lightly doped epitaxial silicon layer atop said silicon substrate.
6. The monolithically integrated silicon and group III-V device of claim 4 wherein said anode of said Schottky diode comprises a metal selected from the group consisting of platinum and aluminum.
7. The monolithically integrated silicon and group III-V device of claim 4 wherein said anode of said Schottky diode is routed to a source terminal of said group III-V transistor by an anode via.
8. The monolithically integrated silicon and group III-V device of claim 1 wherein said silicon device comprises a Schottky diode, and said group III-V transistor is a GaN HEMT, and wherein a cathode of said Schottky diode is formed in said silicon substrate.
9. The monolithically integrated silicon and group III-V device of claim 8 wherein said cathode of said Schottky diode is routed to a drain terminal of said group III-V transistor by a cathode via.
10. The monolithically integrated silicon and group III-V device of claim 2 wherein a cathode of said Schottky diode is routed to a drain terminal of said group III-V transistor by a cathode via, and an anode of said Schottky diode is coupled to a source terminal of said group III-V transistor, thereby forming a parallel combination of said group III-V transistor and said Schottky diode.
11. The monolithically integrated silicon and group III-V device of claim 2 wherein a cathode of said Schottky diode is routed to a source terminal of said group III-V transistor by a cathode via, and an anode of said Schottky diode is not coupled to a drain terminal of said group III-V transistor, thereby forming a series combination of said group III-V transistor and said Schottky diode.
12. The monolithically integrated silicon and group III-V device of claim 1 wherein said silicon device comprises a P-N junction diode.