Method for manufacturing thin film transistor and display device
View Patent ↗A method for manufacturing a thin film transistor includes: forming a source electrode and a drain electrode on a substrate by depositing a metal layer on the substrate at a first temperature and etching the metal layer; forming a protective layer on the source and drain electrodes; and performing a heat treatment on the protective layer at a second temperature higher than the first temperature.
1. A method for manufacturing a thin film transistor, comprising:
forming a source electrode and a drain electrode on a substrate by depositing a metal layer on the substrate at a first temperature of about 280° C. to about 320° C. and etching the metal layer;
forming a protective layer on the source and drain electrodes; and
performing a heat treatment on the protective layer at a second temperature of about 330° C.
2. The method of claim 1 , wherein the deposition of the metal layer is performed using a chemical vapor deposition process.
3. The method of claim 2 , wherein the source electrode and the drain electrode comprise aluminum, and
the protective layer comprises one or more of a silicon nitride (SiN x ) or a silicon oxide (SiO x ).
4. A method for manufacturing a thin film transistor, comprising:
forming a thin film transistor including a source electrode and a drain electrode on a substrate by depositing a metal layer on the substrate at a first temperature of about 280° C. to about, 320° C. and etching the metal layer;
forming a protective layer on the source and drain electrodes; and
performing a heat treatment on the protective layer at a second temperature of about 330° C.;
wherein the second temperature is higher than the first temperature.
5. The method of claim 4 , wherein the deposition of the metal layer is performed using a chemical vapor deposition process.
6. The method of claim 5 , wherein the source electrode and the drain electrode comprise aluminum, and
the protective layer comprises one or more of a silicon nitride (SiN x ) or a silicon oxide (SiO x ).
7. The method of claim 6 , further comprising forming a first electrode, an organic emission layer, and a second electrode on the source and drain electrodes.