Semiconductor device and method of manufacturing the same
View Patent ↗By increasing the area of a source electrode 3 a of a semiconductor element 3 and the area of a source terminal 2 b of a lead frame 2 , it is possible to extend a joint 8 a of the source electrode 3 a bonded to a conductive ribbon 6 and a joint 8 b of the source terminal 2 b . Thus it is possible to reduce an on resistance and easily reduce the number of times a bonding tool comes into contact with the joints to reduce a stress on the semiconductor element 3.
1. A semiconductor device comprising:
a semiconductor element;
at least one first electrode provided on the semiconductor element;
at least one second electrode provided on the semiconductor element;
a die pad on which the semiconductor element is mounted;
at least one first lead including a first terminal electrically connected to the semiconductor element;
at least one second lead including a second terminal electrically connected to the semiconductor element;
a conductive ribbon electrically connecting the first electrode and the first terminal;
a conductor electrically connecting the second electrode and the second terminal;
a first joint at which the first electrode and the conductive ribbon are bonded, wherein the first joint is the only joint that is bonded directly to the first electrode and the conductive ribbon;
a second joint at which the first terminal and the conductive ribbon are bonded, the second joint having substantially a same area as the first joint; and
molding resin for molding the semiconductor element, the conductive ribbon, the conductor, the first terminal, and the second terminal.
2. The semiconductor device according to claim 1 , wherein the conductive ribbon is an aluminum ribbon having a thickness of 0.1 mm and the first joint and the second joint are 1.5 mm×0.8 mm to 0.9 mm in size.
3. The semiconductor device according to claim 1 , wherein the first joint has a width of at least 33% of a width of the first electrode, the width of the first joint being a length along a connection direction of the conductive ribbon.
4. The semiconductor device according to claim 1 , wherein the first terminal has a width increased by about 0.1 mm to 0.5 mm from a width of the second terminal, the widths being lengths along a longitudinal direction of the conductive ribbon.
5. The semiconductor device according to claim 1 , wherein the first joint has a width of at least 75% of a width of the first terminal, the widths being lengths along a longitudinal direction of the conductive ribbon.
6. A semiconductor device comprising:
a power semiconductor element;
a source electrode provided on a surface of the power semiconductor element;
a gate electrode provided on the surface of the power semiconductor element;
a drain electrode provided on a back side of the power semiconductor element;
a die pad on which the power semiconductor element is mounted, the die pad being electrically connected to the drain electrode;
a source lead including a source terminal having a width of 1.0 mm in a longitudinal direction of the lead;
a gate lead including a gate terminal having a width of 0.5 mm in a longitudinal direction of the lead;
a drain lead electrically connected to the die pad;
an aluminum ribbon that electrically connects the source electrode and the source terminal and has a thickness of 0.1 mm;
a conductive wire electrically connecting the gate electrode and the gate terminal;
a first joint at which the source electrode and the aluminum ribbon are bonded to each other, the first joint having a size of 1.5 mm×0.8 mm to 0.9 mm;
a second joint at which the source terminal and the aluminum ribbon are bonded to each other, the second joint having substantially a same area as the first joint; and
molding resin for molding the power semiconductor element, the aluminum ribbon, the conductive wire, the source terminal, and the gate terminal.