Semiconductor device and method of manufacturing the same
View Patent ↗Terminals ( 2 b, 2 c ) are divided into two along a common boundary, coatings ( 10, 11 ) most suitable for two conductive bonding materials ( 5, 6 ) to be used are exposed on the terminals ( 2 b, 2 c ), the most suitable one of the coatings ( 10, 11 ) is selected, and the corresponding conductive bonding material ( 5, 6 ) is bonded onto the coating. Thus it is possible to improve the reliability of bonding and easily reduce a bonding resistance while suppressing a decrease in the reliability of a semiconductor element 3.
1. A semiconductor device comprising:
a semiconductor element including at least a first electrode and a second electrode;
a lead frame including a first a plurality of terminals;
a die pad serving as a region in which the semiconductor element is mounted on the lead frame;
a first terminal and a second terminal of the plurality of terminals being adjacent to each other, each of the first terminal and the second terminal having a side surface that opposes to a side surface of the die pad, each of the first terminal and the second terminal having a first area closer to the die pad and a second area farther from the die pad, the first and the second areas of each of the first terminal and the second terminal being divided by a line parallel to the side of the die pad;
a first coating that is an uppermost layer of the second area of each of the first terminal and the second terminal;
a second coating that is an uppermost layer of the first area of each of the first terminal and the second terminal;
a first conductive bonding material directly connecting the first electrode and the first coating of the first terminal;
a second conductive bonding material directly connecting the second electrode and the second coating of the second terminal; and
molding resin for molding at least the semiconductor element, the first conductive bonding material, and the second conductive bonding material.
2. The semiconductor device according to claim 1 , wherein the first conductive bonding material and the second conductive bonding material are different metals and the first coating and the second coating are made of different plating materials.
3. The semiconductor device according to claim 1 , wherein the first coating is applied like a strip having a width of at least 0.30 mm.
4. The semiconductor device according to claim 1 , wherein the second coating is applied like a strip having a width of at least 0.25 mm.
5. The semiconductor device according to claim 2 , wherein
bondability between the first conductive bonding material and the first coating is higher than bondability between the first conductive bonding material and the second coating,
bondability between the first conductive bonding material and the first coating is higher than bondability between the second conductive bonding material and the first coating,
bondability between the second conductive bonding material and the second coating is higher than bondability between the first conductive bonding material and the second coating, and
bondability between the second conductive bonding material and the second coating is higher than bondability between the second conductive bonding material and the first coating.
6. The semiconductor device according to claim 5 , wherein the first conductive bonding material is a conductive ribbon.
7. The semiconductor device according to claim 5 , wherein the first conductive bonding material is an aluminum ribbon and the first coating is one of a nickel coating and a copper coating.
8. The semiconductor device according to claim 7 , wherein the second conductive bonding material is a gold wire and the second coating is a silver coating.
9. The semiconductor device according to claim 8 , wherein the first coating is applied like a strip over the first terminal and the second terminal and the die pad of the lead frame, and the second coating is applied so as to cover the first coating only on the first areas of each of the first terminal and the second terminal.
10. The semiconductor device according to claim 8 , wherein the first coating is applied over a surface of the lead frame, and the second coating is applied so as to cover the first coating only on the first areas of each of the first terminal and the second terminal.
11. The semiconductor device according to claim 7 , wherein the lead frame is made of solid copper exposed instead of the first coating.
12. The semiconductor device according to claim 8 , wherein the semiconductor element is a power semiconductor element, the first terminal is a source terminal, the second terminal is a gate terminal, the semiconductor device further comprises a drain terminal extended from the die pad and a drain electrode formed on a mounting surface of the power semiconductor element, and the drain electrode is electrically connected to the die pad.
13. A method of manufacturing the semiconductor device according to claim 5 , the method comprising:
plating on the lead frame of the semiconductor device; the plating further comprising:
forming the first coating at least on the uppermost layer of the second area of each of the first terminal and the second terminal; and
forming the second coating at least on the uppermost layer of the first area of each of the first terminal and the second terminal.