IP Library Granted Patent US 8,309,946
Granted Patent B2
US 8,309,946 · App. 12/935,455 · Granted Nov 13, 2012

Resistance variable element

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Quick Facts
Patent No.
US 8,309,946
App. No.
12/935,455
Granted
Nov 13, 2012
Kind
B2
Abstract

A resistance variable element of the present invention comprises a first electrode ( 103 ), a second electrode ( 107 ), and a resistance variable layer which is interposed between the first electrode ( 103 ) and the second electrode ( 107 ) to contact the first electrode ( 103 ) and the second electrode ( 107 ), the resistance variable layer being configured to change in response to electric signals with different polarities which are applied between the first electrode ( 103 ) and the second electrode ( 107 ), the resistance variable layer comprising an oxygen-deficient transition metal oxide layer, and the second electrode ( 107 ) comprising platinum having minute hillocks ( 108 ).

Claims (18)

1. A resistance variable element comprising:

a first electrode;

a second electrode; and

a resistance variable layer which is interposed between the first electrode and the second electrode to contact the first electrode and the second electrode, the resistance variable layer being configured to reversibly change resistivity in response to electric signals with different polarities which are applied between the first electrode and the second electrode, wherein:

the resistance variable layer includes a stacked layer structure including a first oxygen-deficient transition metal oxide layer and a second oxygen-deficient transition metal oxide layer with higher oxygen content than the first oxygen-deficient transition metal oxide layer,

the second oxygen-deficient transition metal oxide layer is in contact with the second electrode,

a material of the second electrode has crystal grains having grain boundaries,

the material of the second electrode has protrusions at an interface between the second oxygen-deficient transition metal oxide layer and the second electrode, the protrusions protruding from the grain boundaries, and

the second oxygen-deficient transition metal oxide layer has locally thinned portions at concave portions corresponding to the protrusions.

2. The resistance variable element according to claim 1 ,

wherein an interface between the first oxygen-deficient transition metal oxide layer and the second oxygen-deficient transition metal oxide layer is flat.

3. The resistance variable element according to claim 1 ,

wherein the second electrode comprises platinum or platinum alloy.

4. The resistance variable element according to claim 3 ,

wherein the locally thinned portions have a thickness which is not less than 0.1 nm and not more than 5 nm.

5. The resistance variable element according to any one of claims 1 , 2 , 3 and 4 , wherein the transition metal oxide layer is a tantalum oxide layer.

6. The resistance variable element according to claim 1 , wherein the protrusions have a V-shape cross section.

7. The resistance variable element according to claim 1 , wherein the protrusions are randomly formed.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2020
From: PANASONIC CORPORATION
To: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
Reel/Frame 052755/0917 →