Light emitting device and manufacturing method for same
Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region.
1. A light emitting device comprising:
a support substrate;
a reflective layer on the support substrate;
a complex layer including a current blocking region and ohmic contact regions on the reflective layer;
a light emitting semiconductor layer disposed on the complex layer and including a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer;
a passivation layer disposed on the complex layer, the light emitting semiconductor layer divided into a plurality of regions by a portion of the passivation layer; and
a first electrode disposed on the light emitting semiconductor layer and the portion of the passivation layer.
2. The light emitting device of claim 1 , further comprising a diffusion barrier layer between the reflective layer and the support substrate.
3. The light emitting device of claim 2 , further comprising a wafer bonding layer between the diffusion barrier layer and the support substrate.
4. The light emitting device of claim 1 , wherein the passivation layer is at both of a lateral surface and a portion of a top surface of the light emitting semiconductor layer.
5. The light emitting device of claim 1 , wherein the current blocking region includes one of an electric insulating material, an empty space filled with air, or a material forming a schottky contact interface with respect to the second conductive semiconductor layer.
6. The light emitting device of claim 1 , further comprising a light extracting structure on the light emitting structure.
7. The light emitting device of claim 6 , wherein the light extracting structure contacts the light emitting structure.
8. The light emitting device of claim 6 , wherein a top surface of the first electrode is higher than a top surface of the light extracting structure.
9. The light emitting device of claim 1 , wherein a lowermost surface of the first electrode is lower than a top surface of the active layer.