Method for fabricating nitride-based semiconductor device having electrode on m-plane
View Patent ↗A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12 ; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10 ; and an electrode 30 provided on the semiconductor multilayer structure 20 . The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32 . The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
1. A method for fabricating a nitride-based semiconductor device, comprising the steps of:
(a) providing a substrate;
(b) forming on the substrate a nitride-based semiconductor multilayer structure including a p-type GaN-based semiconductor region, a surface of the p-type GaN-based semiconductor region being an m-plane; and
(c) forming an electrode on the surface of the p-type GaN-based semiconductor region of the semiconductor multilayer structure,
wherein step (c) includes
forming a Mg layer on the surface of the p-type GaN-based semiconductor region, and
forming a Ag layer on the Mg layer, and
performing a heat treatment to anneal the electrode at a temperature of 500° C. to 700° C., and
wherein a contact resistance of the electrode arranged on the m-plane and annealed at a temperature of 500° C. to 700° C. is less than 1.0×10 −02 Ωcm 2 , and is lower than a contact resistance when the electrode is arranged on a c-plane of the same p-type semiconductor region and annealed at a temperature of 500° C. to 700° C.
2. The method of claim 1 , wherein the heat treatment is performed at a temperature of 550° C. to 600° C.
3. The method of claim 1 , wherein the p-type GaN-based semiconductor region is made of an Al x In y Ga z N semiconductor (where x+y+z=1, x≧0, y≧0, and z>0).
4. The method of claim 3 , wherein the step of forming the Mg layer includes irradiating Mg with pulses of an electron beam such that Mg is deposited onto the surface of the p-type GaN-based semiconductor region.
5. The method of claim 3 , further comprising removing the substrate after step (b).
6. The method of claim 3 , wherein the p-type GaN-based semiconductor region is made of GaN.
7. The method of claim 1 , wherein a Mg—Ag alloy layer is formed between the Mg layer and the Ag layer after the heat treatment.
8. The method of claim 1 , wherein the Ag layer is provided directly on the Mg layer.