Large-area nanoenabled macroelectronic substrates and uses therefor
View Patent ↗A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
1. A method of fabricating nanowires having reduced surface scattering, comprising:
(A) selecting a semiconductor material;
(B) forming a plurality of nanowires from the selected semiconductor material;
(C) oxidizing a circumferential surface of each nanowire of the plurality of nanowires to create a plurality of oxidized nanowires; and
(D) annealing each oxidized nanowire of the plurality of oxidized nanowires.
2. The method of claim 1 , wherein step (D) comprises:
annealing each oxidized nanowire in an H 2 environment to passivate dangling bonds at the interface of an oxidized layer and a non-oxidized portion of each oxidized nanowire.
3. The method of claim 1 , wherein the semiconductor material comprises silicon which is oxidized in step (C) to create an oxide layer of SiO 2 on the plurality of silicon nanowires.
4. The method of claim 3 , further comprising the step of nitriding the silicon dioxide layer to form an oxynitride coating on the plurality of nanowires.