IP Library › Patent Application 12941529
Patent Application
App. No. 12/941,529

Back Contact Deposition Using Water-Doped Gas Mixtures

Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US None
App. No.
12/941,529
Abstract

A method of manufacturing a photovoltaic module may include depositing a semiconductor material adjacent to a substrate; and depositing a back contact material adjacent to the semiconductor material, where depositing the back contact material may include directing a feed gas including hydrogen toward the substrate.

Claims (19)

1 . A method of manufacturing a photovoltaic module, the method comprising:

depositing a semiconductor material adjacent to a substrate; and

depositing a contact material adjacent to the semiconductor material in the presence of a feed gas comprising hydrogen, oxygen or water toward the substrate.

2 . The method of claim 1 , wherein the contact material comprises a molybdenum nitride.

3 . The method of claim 1 , wherein the feed gas comprises argon gas.

4 . The method of claim 1 , wherein the feed gas comprises nitrogen gas.

5 . The method of claim 1 , wherein the feed gas comprises an argon-nitrogen gas mix.

6 . The method of claim 1 , wherein the feed gas comprises oxygen.

7 . The method of claim 1 , wherein the feed gas comprises water.

8 . The method of claim 1 , further comprising doping the feed gas with hydrogen.

9 . The method of claim 1 , further comprising doping the feed gas with oxygen.

10 . The method of claim 1 , further comprising doping the feed gas with water vapor.

11 . The method of claim 1 , wherein the step of depositing a back contact material comprises physical vapor deposition.

12 . The method of claim 1 , wherein the step of depositing a back contact material comprises chemical vapor deposition.

13 . The method of claim 1 , wherein the step of depositing a back contact material comprises laser ablation.

14 . The method of claim 1 , further comprising depositing a back support on the back contact material.

15 . A photovoltaic module comprising:

a cadmium telluride layer adjacent to a substrate; and

a molybdenum nitride back contact comprising at least a trace amount of hydrogen, oxygen, or water.

Assignments (4)
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS Recorded Nov 15, 2021
From: JPMORGAN CHASE BANK, N.A.
To: FIRST SOLAR, INC.
Reel/Frame 058132/0261 →
CORRECTIVE ASSIGNMENT TO CORRECT THE PATENT APPLICATION 13/895113 ERRONEOUSLY ASSIGNED BY FIRST SOLAR, INC. TO JPMORGAN CHASE BANK, N.A. ON JULY 19, 2013 PREVIOUSLY RECORDED ON REEL 030832 FRAME 0088. ASSIGNOR(S) HEREBY CONFIRMS THE CORRECT PATENT APPLICATION TO BE ASSIGNED IS 13/633664. Recorded Sep 19, 2014
From: FIRST SOLAR, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 033779/0081 →
SECURITY AGREEMENT Recorded Jul 19, 2013
From: FIRST SOLAR, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 030832/0088 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 22, 2011
From: ADDEPALLI, PRATIMA; JAYARAMAN, SREENIVAS
To: FIRST SOLAR, INC.
Reel/Frame 025844/0266 →