Semiconductor light emitting device and method of manufacturing the same
Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.
1. A light emitting device, comprising:
a first conductive type semiconductor layer;
a second conductive type semiconductor layer; and
an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer,
wherein the active layer comprises a first active layer, a second active layer, and a first dual barrier layer between the first active layer and the second active layer,
wherein the first active layer includes at least one period of a first well layer and a first barrier layer,
wherein the second active layer includes at least one period of a second well layer and a second barrier layer, and
wherein the first dual barrier layer has a thickness greater than a thickness of the first barrier layer and/or the second barrier layer,
wherein the first dual barrier layer includes a third barrier layer and a fourth barrier layer between the first active layer and the second active layer.
2. The light emitting device according to claim 1 , wherein the first dual barrier layer includes an intermediate well layer between the third barrier layer and the fourth barrier layer.
3. The light emitting device according to claim 1 , wherein the first active layer and the second active layer comprise a multiple quantum well structure.
4. The light emitting device according to claim 1 , further comprising:
a second dual barrier layer in the first active layer and/or the second active layer.
5. The light emitting device according to claim 1 , wherein the first dual barrier layer is configured to confine some of electrons injected in the active layer.
6. The light emitting device according to claim 2 , wherein the third barrier layer is formed of Al x Ga 1-x N (0≦x≦0.5) under the intermediate well layer, and the fourth barrier layer is formed of Al x Ga 1-x N (0≦x≦0.5) on the intermediate well layer.
7. The light emitting device according to claim 2 , wherein the intermediate well layer is formed of In y Ga 1-y N (0≦y≦1).
8. The light emitting device according to claim 2 , wherein the intermediate well layer comprises an In composition ratio greater than an In composition ratio of the first well layer and/or the second well layer.
9. The light emitting device according to claim 1 , wherein the first dual barrier layer has a thickness of 150 to 250 Å.
10. The light emitting device according to claim 2 , wherein the third barrier layer and the fourth barrier layer of the first dual barrier layer are formed with a same thickness or a different thickness.
11. The light emitting device according to claim 2 , wherein the intermediate well layer of the first dual barrier layer has an energy band higher than an energy band of the first well layer and/or the second well layer.
12. A light emitting device, comprising:
a conductive support substrate;
a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and
a first electrode on the light emitting structure,
wherein the active layer comprises a first active layer, a second active layer, and a dual barrier layer between the first active layer and the second active layer,
wherein the dual barrier layer includes a first sub barrier layer and a second sub barrier layer between the first active layer and the second active layer, and
wherein the dual barrier layer is overlapped with the conductive support substrate and the first electrode.
13. The light emitting device according to claim 12 , wherein the dual barrier layer comprises an intermediate well layer between the first sub barrier layer and the second sub barrier layer, and
wherein the first sub barrier layer is formed of Al x Ga 1-x N (0≦x≦0.5) under the intermediate well layer and the second sub barrier layer is formed of Al x Ga 1-x N (0≦x≦0.5), on the intermediate well layer.
14. The light emitting device according to claim 12 , wherein the dual barrier layer comprises an intermediate well layer which is formed of GaN or InGaN, and the intermediate well layer has an energy band lower than an energy band of the first sub barrier layer and/or the second sub barrier layer.
15. The light emitting device according to claim 12 , wherein the dual barrier is at least one in number and is disposed between a center of the active layer and the first conductive type semiconductor layer.
16. The light emitting device according to claim 12 , further comprising:
a conductive cladding layer on and/or under the active layer.
17. The light emitting device according to claim 12 , wherein the active layer is formed in 2 to 10 periods.
18. The light emitting device according to claim 12 , wherein an energy band of the first sub barrier layer and the second sub barrier layer is higher than an energy band of the first barrier layer.
19. The light emitting device according to claim 12 , wherein the dual barrier layer is formed nearer to the first conductive type semiconductor layer than to the second conductive type semiconductor layer.