Organic light emitting diode display device with different configurations of switching and driving transistors
View Patent ↗An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed. The OLED display device includes a plurality of scan lines, a plurality of data lines, and a plurality of pixels disposed in a region in which the scan lines cross the data lines, where each pixel of the plurality of pixels includes: a switching transistor including a first gate electrode, a first semiconductor layer disposed over the first gate electrode, a first gate insulating layer interposed between the first gate electrode and the first semiconductor layer, a first source electrode and a first drain electrode, a driving transistor including a second semiconductor layer, a second gate electrode disposed over the second semiconductor layer, a second gate insulating layer interposed between the second gate electrode and the second semiconductor layer, a second source electrode and a second drain electrode, and an organic light emitting diode electrically connected with the second source and second drain electrodes of the driving transistor, where the first and second semiconductor layers are formed of the same material, and from the same processing.
1. An organic light emitting diode (OLED) display device, comprising:
a plurality of scan lines, a plurality of data lines, and a plurality of pixels disposed in a region in which the scan lines cross the data lines,
wherein each pixel of the plurality of pixels comprises:
a switching transistor comprising a first gate electrode, a first semiconductor layer disposed over the first gate electrode, a first gate insulating layer interposed between the first gate electrode and the first semiconductor layer, a first source electrode and a first drain electrode;
a driving transistor comprising a second semiconductor layer, a second gate electrode disposed over the second semiconductor layer, a second gate insulating layer interposed between the second gate electrode and the second semiconductor layer, a second source electrode and a second drain electrode, wherein the first gate insulating and the second gate insulating layer are separate layers;
an organic light emitting diode electrically connected with the second source and second drain electrodes of the driving transistor; and
a first etch stop layer disposed over and contacting at least a partial region of the first semiconductor layer, and a second etch stop layer disposed over and contacting at least a partial region of the second semiconductor layer.
2. The device according to claim 1 , wherein the first and second semiconductor layers are formed of polycrystalline silicon (poly-Si).
3. The device according to claim 2 , wherein the poly-Si for the first and second semiconductor layers has the same crystalline structure.
4. The device according to claim 1 , wherein each pixel further comprises a first ohmic contact layer interposed between the first semiconductor layer and the first source and first drain electrodes, and a second ohmic contact layer interposed between the second semiconductor layer and the second source and second drain electrodes.
5. The device according to claim 4 , wherein the first and second ohmic contact layers are formed of amorphous silicon doped with impurities.
6. The device according to claim 1 , wherein the OLED includes a lower electrode electrically connected with the second source and second drain electrodes, an organic layer disposed over the lower electrode and including one or more emission layers, and an upper electrode disposed over the organic layer.
7. The device according to claim 1 , wherein the second gate electrode is disposed over the second source and second drain electrodes.
8. The device according to claim 1 , wherein the first source and first drain electrodes are formed of the same material as the second source and drain electrodes.