IP Library Granted Patent US 8,340,528
Granted Patent B2
US 8,340,528 · App. 12/941,942 · Granted Dec 25, 2012

Optical transceiver

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Quick Facts
Patent No.
US 8,340,528
App. No.
12/941,942
Granted
Dec 25, 2012
Kind
B2
Abstract

An optical transceiver for detecting an incoming light beam and for transmitting an outgoing light beam along a common optical axis is provided. Such an optical transceiver provides a compact optical transceiver that is suitable for a wide variety of applications.

Claims (35)

1. An optoelectronic device, the optoelectronic device comprising:

a substrate including a group IV semiconductor layer positioned along a light beam axis;

an optical transceiver, including an optical detector and optical transmitter, the optical detector being positioned along the light beam axis and configured to receive an incoming light beam and to detect a first wavelength and/or range of wavelengths and the optical transmitter being positioned along the light beam axis and configured to transmit an outgoing light beam, wherein the outgoing light beam includes a second wavelength and/or range of wavelengths, the optical detector comprising one or more materials that are optically unresponsive with respect to at least a portion of the outgoing light beam so that an optical signal path for the outgoing light beam is defined that extends from the optical transmitter through the optical detector and the optical detector and the optical transmitter being stacked one on top of the other; and

a control circuit positioned adjacent the optical transceiver and in electrical communication with the optical transceiver,

wherein the substrate, the optical transceiver, and the control circuit are monolithically formed in a stacked configuration, the substrate positioned in a first layer of the stacked configuration without the optical transceiver or the control circuit, the optical transceiver positioned in a second layer of the stacked configuration without the substrate or the control circuit, and the control circuit positioned in a third layer of the stacked configuration without the substrate or the optical transceiver.

2. An optoelectronic device according to claim 1 wherein the control circuit is positioned in a layer between the substrate and the optical transceiver.

3. An optoelectronic device according to claim 1 wherein the optical transceiver is positioned in a layer between the substrate and the control circuit.

4. An optoelectronic device according to claim 1 further comprising a sensor.

5. An optoelectronic device according to claim 4 wherein the sensor is one of a temperature sensor, a pressure sensor, a PH sensor, a humidity sensor, a chemical sensor, and an electro-magnetic field sensor.

6. An optoelectronic device according to claim 4 wherein the sensor is a pressure sensor.

7. An optoelectronic device according to claim 4 wherein the sensor is a PH sensor.

8. An optoelectronic device according to claim 4 wherein the sensor is a humidity sensor.

9. An optoelectronic device according to claim 4 wherein the sensor is a chemical sensor.

10. An optoelectronic device according to claim 4 wherein the sensor is an electromagnetic field sensor.

11. An optoelectronic device according to claim 4 wherein the sensor is configured to be exposed to an environment to be sensed.

12. The optoelectronic device according to claim 1 , wherein one or more trenches are provided that extend through a portion of the optoelectronic device, the one or more trenches serving to help define a current aperture of the optical transmitter and/or provide an electrical connection to the optical detector and/or the optical transmitter.

13. The optoelectronic device according to claim 1 , further comprising a buffer layer formed between the optical transceiver and the control circuit.

14. The optoelectronic device according to claim 13 , wherein the buffer layer includes an insulating layer with contacts formed therethrough to provide electrical communication between the optical transceiver and the control circuit.

15. The optoelectronic device according to claim 13 , wherein the buffer layer compensates for any lattice mismatch between material used to form the control circuit and material used to form the optical transceiver.

16. An optoelectronic device comprising:

an optical detector whose input comprises a first light beam, the first light beam including at least a first wavelength;

an optical transmitter whose output comprises a second light beam, wherein the second light beam includes at least a second wavelength that is different from the first wavelength and wherein the optical detector and the optical transmitter are arranged such that one of the optical detector and optical transmitter is stacked on top of the other of the optical detector and transmitter, wherein the optical detector converts the input to a voltage which is stored in a power source that powers the optical transmitter when generating the second light beam;

a single optical input/output configured to communicate with both the optical transmitter and the optical detector;

a substrate having a group IV semiconductor layer and having a transparent layer that is transparent or substantially transparent to the first and second wavelengths and/or range of wavelengths, a portion of the group IV semiconductor layer being removed to create a recessed region in the substrate;

a control circuit formed in the group IV semiconductor layer; and

the optical detector and the optical transmitter formed in the recessed region where the portion of the group IV semiconductor layer has been removed, wherein the optical detector and the optical transmitter are in electrical communication with the control circuit such that the first beam of light and/or the second beam of light pass through at least a portion of the control circuit.

17. An optoelectronic device according to claim 16 wherein the substrate, the optical detector, the optical transmitter and the control circuit are monolithically formed.

18. A method for forming an optoelectronic device, the method comprising the steps of:

forming an optical detector on a first substrate that receives a first wavelength and/or range of wavelengths, and an optical transmitter that transmits a second wavelength and/or range of wavelengths, the optical detector and/or optical transmitter having one or more pads;

forming a control circuit on a second substrate, the control circuit having one or more pads;

situating the first substrate with respect to the second substrate such that the control circuit is positioned between the second substrate and the optical detector and/or optical transmitter; and

securing the first substrate relative to the second substrate with selected pads of the optical detector and/or optical transmitter in electrical communication with selected pads of the control circuit.

19. A method according to claim 18 wherein the selected pads of the optical detector and/or optical transmitter are positioned to align with the selected pads of the control circuit.

20. A method according to claim 18 wherein the selected pads of the optical detector and/or optical transmitter are solder bump bonded to the selected pads of the control circuit.

21. A method according to claim 18 wherein the selected pads of the optical detector and/or optical transmitter are wire bonded to the selected pads of the control circuit.

Assignments (6)
PATENT RELEASE AND REASSIGNMENT Recorded Jul 5, 2022
From: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
To: II-VI INCORPORATED; MARLOW INDUSTRIES, INC.; EPIWORKS, INC.; LIGHTSMYTH TECHNOLOGIES, INC.; KAILIGHT PHOTONICS, INC.; COADNA PHOTONICS, INC.; OPTIUM CORPORATION; FINISAR CORPORATION; II-VI OPTICAL SYSTEMS, INC.; M CUBED TECHNOLOGIES, INC.; II-VI PHOTONICS (US), INC.; II-VI DELAWARE, INC.; II-VI OPTOELECTRONIC DEVICES, INC.; PHOTOP TECHNOLOGIES, INC.
Reel/Frame 060574/0001 →
SECURITY INTEREST Recorded Jul 1, 2022
From: II-VI INCORPORATED; II-VI DELAWARE, INC.; M CUBED TECHNOLOGIES, INC.; II-VI PHOTONICS (US), INC.; PHOTOP TECHNOLOGIES, INC.; COHERENT, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 060562/0254 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2020
From: FINISAR CORPORATION
To: II-VI DELAWARE, INC.
Reel/Frame 052286/0001 →
NOTICE OF GRANT OF SECURITY INTEREST IN PATENTS Recorded Sep 25, 2019
From: II-VI INCORPORATED; MARLOW INDUSTRIES, INC.; EPIWORKS, INC.; LIGHTSMYTH TECHNOLOGIES, INC.; KAILIGHT PHOTONICS, INC.; COADNA PHOTONICS, INC.; OPTIUM CORPORATION; FINISAR CORPORATION; II-VI OPTICAL SYSTEMS, INC.; M CUBED TECHNOLOGIES, INC.; II-VI PHOTONICS (US), INC.; II-VI DELAWARE, INC.; II-VI OPTOELECTRONIC DEVICES, INC.; PHOTOP TECHNOLOGIES, INC.
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 050484/0204 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 22, 2019
From: HONEYWELL INTERNATIONAL INC.
To: FINISAR CORPORATION
Reel/Frame 050279/0059 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 22, 2019
From: TATUM, JIMMY A.; GUENTER, JAMES K.
To: HONEYWELL INTERNATIONAL INC.
Reel/Frame 049260/0690 →