Growth of Single Crystal Nanowires
A diode is provided which comprises a cathode, an anode, and at least one crystalline nanowire in electrical communication with said cathode and said anode. The crystalline nanowire comprises a group IV metal which is substantially straight and substantially free of nanoparticles.
1 . A diode, comprising:
a cathode;
an anode; and
at least one crystalline nanowire in electrical communication with said cathode and said anode, said crystalline nanowire comprising a group IV metal which is substantially straight and substantially free of nanoparticles.
2 . The diode of claim 1 , wherein the group IV metal is selected from the group consisting of silicon and germanium.
3 . The diode of claim 1 , wherein said crystalline nanowire comprises silicon and germanium.
4 . The diode of claim 1 , wherein the nanowire has a straightness parameter of no more than 2.
5 . The diode of claim 1 , wherein the nanowire has a metallic nanocrystal disposed at one end thereof.
6 . The diode of claim 5 , wherein the metallic nanocrystal is selected from the group consisting of gold and aluminum nanocrystals.
7 . The diode of claim 1 , wherein the nanowire has an average diameter of about 5 nm to about 50 nm.
8 . The diode of claim 1 , wherein the nanowire has a length of at least one, micron.
9 . The diode of claim 1 , wherein the nanowires is a single crystal based on HR TEM analysis.
10 . The diode of claim 1 , wherein the nanowires is a single crystal of silicon.
11 . The diode of claim 1 , wherein the nanowires is a single crystal of silicon, has a metallic nanocrystal disposed at one end thereof, has an average diameter of about 5 nm to about 50 nm, and has an average length of at least one micron.
12 . The diode of claim 1 , wherein the diode is a light emitting diode.
13 . The diode of claim 1 , wherein the nanowire contains less than about 5 wt. % nanoparticles, based on the total mass of the nanowires and nanoparticles.
14 . The diode of claim 1 , wherein the nanowire contains less than about 1 wt. % nanoparticles, based on the total mass of the nanowires and nanoparticles.
15 . The diode of claim 1 , wherein the nanowires is disposed on a substrate comprising a catalyst site attached to the substrate surface, wherein the nanowire is covalently attached to the catalyst site.
16 . The diode of claim 1 , wherein said crystalline nanowire is substantially free of Group IV metal nanoparticles.
17 . The diode of claim 1 , wherein said nanowire has a plurality of inorganic particles disposed along its axis.
18 . The diode of claim 17 , wherein said nanowire delivers charge to the inorganic particles.
19 . The diode of claim 17 , wherein said nanowire detects changes in the resistance of the inorganic particles.
20 . The diode of claim 1 , further comprising a second nanowire of different composition than said nanowire.