Light emitting diode
View Patent ↗A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, wherein the active layer is between the first semiconductor layer and the second semiconductor layer a trench penetrating through the second semiconductor layer and the active layer to expose the first semiconductor layer a first electrode disposed at a bottom of the trench, wherein the first electrode includes at least one first finger, an insulating layer covering the first electrode, and a second electrode including at least one second finger on the insulating layer, wherein the second finger overlaps with the first finger and the second finger has a width smaller than that of the trench.
1. A light-emitting diode, comprising:
a substrate;
a first semiconductor layer disposed above the substrate;
an active layer disposed above the first semiconductor layer;
a second semiconductor layer disposed above the active layer, wherein the active layer is between the first semiconductor layer and the second semiconductor layer;
a trench penetrating through the second semiconductor layer and the active layer to expose the first semiconductor layer;
a first electrode disposed at a bottom of the trench, wherein the first electrode comprises at least one first finger;
an insulating layer covering the first electrode; and
a second electrode comprising at least one second finger on the insulating layer, wherein the second finger overlaps with the first finger and the second finger has a width smaller than that of the trench.
2. The light-emitting diode according to claim 1 , wherein the substrate is a non-conductive substrate.
3. The light-emitting diode according to claim 1 , wherein the first electrode and the second electrode are disposed on the same side of the substrate.
4. The light-emitting diode according to claim 1 , wherein the first electrode or the second electrode comprises a plurality of fingers.
5. The light-emitting diode according to claim 1 , wherein the trench has a closed-loop shaped pattern.
6. The light-emitting diode according to claim 1 , wherein the first finger is substantially parallel with the second finger.
7. The light-emitting diode according to claim 1 , wherein a ratio of overlap between the first finger and the second finger is greater than 70%.
8. The light-emitting diode according to claim 1 , wherein the insulating layer extends to a top surface of the second semiconductor layer.
9. The light-emitting diode according to claim 1 , wherein the insulating layer covers a bottom and sidewalls of the trench, and defines a recess region within the trench.
10. The light-emitting diode according to claim 9 , further comprising a metal reflection layer disposed within the recess region.
11. The light-emitting diode according to claim 9 , wherein the second finger is disposed in the recess region.
12. The light-emitting diode according to claim 1 further comprising a transparent conductive layer disposed on the insulating layer and the second semiconductor layer.
13. The light-emitting diode according to claim 12 , wherein the second finger is disposed on the transparent conductive layer.
14. The light-emitting diode according to claim 1 , wherein the trench is filled with the insulating layer.
15. The light-emitting diode according to claim 1 , wherein the second finger covers the insulating layer and is in direct contact with the second semiconductor layer.
16. The light-emitting diode according to claim 1 , wherein the second electrode comprises a transparent conductive layer.
17. The light-emitting diode according to claim 16 , wherein the second finger is disposed on the transparent conductive layer.
18. The light-emitting diode according to claim 1 , wherein the second finger is disposed within the trench.
19. The light-emitting diode according to claim 1 , wherein the second finger has a width smaller than the first finger.