Thermally controlled semiconductor optical waveguide
View Patent ↗An apparatus includes a conductive or semiconductive substrate and a dielectric layer located directly thereon. A semiconductor layer is located directly on the dielectric layer. The semiconductor layer includes a ridge waveguide and a heater strip extending parallel to the ridge waveguide. The heater strip is electrically isolated from the ridge waveguide and is doped to carry a current therein about parallel to the ridge waveguide.
1. An apparatus, comprising:
a conductive or semiconductive substrate;
a dielectric layer located directly on said substrate;
a semiconductor layer located directly on the dielectric layer, said semiconductor layer including a ridge waveguide and a heater strip extending parallel to said ridge waveguide, wherein said heater strip is electrically isolated from said ridge waveguide and is doped to carry a current therein about parallel to said ridge waveguide;
a first electrode pad and a second electrode pad located on different parts of the heater strip wherein the current is carried between the first electrode pad and the second electrode pad in a direction about parallel to said ridge waveguide; and
a third electrode pad located on the heater strip in between the first electrode pad and the second electrode pad, wherein a portion of the current is configured to be carried in a first direction through the heater strip from the first electrode pad to the third electrode pad and a different portion of the current is configured to be carried in a second direction, that is opposite the first direction, through the heater strip from the second electrode pad to the third electrode pad.
2. The apparatus of claim 1 , wherein said heater strip has a conductivity at least about 1E4 times greater than said ridge waveguide.
3. The apparatus of claim 1 , wherein the ridge waveguide is an intrinsic semiconductor.
4. The apparatus of claim 1 , further comprising a second heater strip extending parallel to said ridge waveguide, said second heater strip being electrically isolated from said ridge waveguide and located on an opposite side of said ridge waveguide than said heater strip, the second heater strip being doped to carry a current therein.
5. The apparatus of claim 1 , wherein said ridge waveguide has a first top surface and said heater strip has a second top surface that is about coplanar with said first top surface.
6. The apparatus of claim 1 , further comprising a Mach-Zehnder interferometer, said ridge waveguide forming part of one optical waveguide arm of the Mach-Zehnder interferometer.
7. The apparatus of claim 1 , wherein said heater strip and said ridge waveguide are formed from contiguous portions of said semiconductor layer.
8. The apparatus of claim 1 , wherein said heater strip has a bottom surface that is located closer to said semiconductor substrate than a bottom surface of said ridge waveguide.
9. The apparatus of claim 1 , wherein said heater strip is configured to change a temperature of said ridge waveguide at a frequency of at least 1 MHz.
10. A method, comprising
providing a conductive or semiconductive substrate having a semiconductor layer located thereover and a dielectric layer located therebetween;
forming from said semiconductor layer, a ridge waveguide and a heater strip extending parallel to said ridge waveguide;
doping said semiconductor layer such that said heater strip is configured to carry a current therein about parallel to said ridge waveguide, wherein said heater strip is electrically isolated from said ridge waveguide;
forming a first electrode pad and a second electrode pad located on different parts of the heater strip wherein the current is carried between the first electrode pad and the second electrode pad in a direction about parallel to said ridge waveguide; and
forming a third electrode pad on the heater strip in between the first electrode pad and the second electrode pad, wherein a portion of the current is configured to be carried in a first direction through the heater strip from the first electrode pad to the third electrode pad and a different portion of the current is configured to be carried in a second direction, that is opposite the first direction, through the heater strip from the second electrode pad to the third electrode pad.
11. The method of claim 10 , wherein said heater strip has a conductivity at least about 1E4 times greater than said ridge waveguide.
12. The method of claim 10 , wherein the ridge waveguide is an intrinsic semiconductor.
13. The method of claim 10 , further comprising forming a second heater strip extending about parallel to said ridge waveguide, said second heater strip being electrically isolated from said ridge waveguide and located on an opposite side of said ridge waveguide than said first heater strip, said second heater strip being doped to carry a current therein.
14. The method of claim 10 , wherein said ridge waveguide has a first top surface and said heater strip has a second top surface that is about coplanar with said first top surface.
15. The method of claim 10 , further comprising forming a Mach-Zehnder interferometer, said ridge waveguide forming part of one optical waveguide arm of the Mach-Zehnder interferometer.
16. The method of claim 10 , further comprising forming said heater strip and said ridge waveguide from contiguous portions of said semiconductor layer.
17. The method of claim 10 , wherein said heater strip has a bottom surface that is located closer to said semiconductor substrate than a bottom surface of said ridge waveguide.
18. The method of claim 10 , further comprising configuring a current source to switch a temperature of said heater strip at a frequency of at least 1 MHz.