Granted Patent B1

US 8,413,317 · App. 12/945,681 · Granted Apr 9, 2013

Abstract

Claims (55)

1. A method for fabricating a structure for a microelectric device comprising:

depositing a resist film;

curing the resist film at a temperature of at least 180 degrees centigrade to provide a cured resist film capable of supporting a line having a line height and a line width, the line height divided by the line width being an aspect ratio of at least ten;

removing a portion of the cured resist film, a remaining portion of the resist film forming the line having the aspect ratio;

depositing an insulating layer after the line is formed;

removing the line to provide a trench in the insulating layer, the trench having a height and a width, the height divided by the width corresponding to the aspect ratio; and

providing at least a portion of the structure in the trench.

2. A method for fabricating a structure for a microelectric device, wherein the structure is a capacitor, the method comprising:

depositing a metal seed layer;

depositing a resist film after the step of depositing the metal seed layer;

curing the resist film at a temperature of at least 180 degrees centigrade to provide a cured resist film capable of supporting a line having an aspect ratio of at least ten;

removing a portion of the cured resist film, a remaining portion of the resist film forming the line;

depositing an insulating layer after the line is formed;

removing the line to provide a trench in the insulating layer, the trench having a height and a width, the height divided by the width corresponding to the aspect ratio; providing at least a portion of the structure in the trench; and

wherein the step of providing the at least the portion of the structure further includes providing at least one conductive layer in the trench;

removing a portion of the insulating layer adjacent to the at least one conductive layer;

depositing an additional insulating layer, the additional insulating layer encapsulating the at least one conductive layer; and

depositing an additional conductive layer on the additional insulating layer.

3. The method of claim 2 wherein the step of providing the resist film further includes:

depositing a wet-etchable layer, the wet-etchable layer also being self-leveling; and

depositing a self-leveling layer on the wet etchable layer.

4. The method of claim 3 wherein the wet etchable layer includes polydimethylglutarimide (PMGI) and the self-leveling layer includes photoresist.

5. A method for fabricating a pole for magnetic recording transducer comprising:

depositing a resist film;

curing the resist film at a temperature of at least 180 degrees centigrade to provide a cured resist film capable of supporting a line having an aspect ratio of at least ten;

removing a portion of the cured resist film, a remaining portion of the resist film forming the line;

depositing a nonmagnetic layer after the line is formed;

removing the line to provide a trench in the nonmagnetic layer, the trench having a height and a width, the height divided by the width corresponding to the aspect ratio;

depositing at least one pole layer, the at least one pole layer being magnetic, a portion of the at least one pole layer residing in the trench; and

removing a portion of the nonmagnetic layer adjacent to the at least one pole layer.

6. The method of claim 5 wherein the height of the trench is at least twelve times the width.

7. The method of claim 5 wherein the line is at least 2.5 micrometers tall.

8. The method of claim 5 wherein the temperature is at least two hundred degrees.

9. The method of claim 8 wherein the temperature is not more than two hundred forty degrees centigrade.

10. The method of claim 5 wherein the nonmagnetic layer includes aluminum oxide.

11. The method of claim 5 wherein the step of removing the line further includes:

planarizing the nonmagnetic layer;

reactive ion etching the line.

12. The method of claim 11 wherein the step of removing the line further includes:

wet etching a remaining portion of the line.

13. The method of claim 5 wherein the magnetic recording transducer is an energy assisted magnetic recording (EAMR) transducer.

14. A method for fabricating a pole for magnetic recording transducer comprising:

depositing a polydimethylglutarimide (PMGI) layer on a seed layer residing on a sloped surface;

depositing a photoresist layer on the PMGI layer, the PMGI layer and the photoresist layer forming a bi-layer resist film;

curing the bi-layer resist film at a temperature of at least 200 degrees centigrade to provide a cured resist film capable of supporting a line having an aspect ratio of at least twelve, the cured resist film being at least 2.5 micrometers tall;

providing a hard mask on the cured resist film, the hard mask covering a portion of the cured resist film corresponding to the line;

removing a portion of the cured resist film exposed by the hard mask, a remaining portion of the resist film forming the line;

depositing an aluminum oxide layer after the line is formed;

planarizing the aluminum oxide layer;

reactive ion etching a portion of the line corresponding to the photoresist layer;

wet etching the line, providing a trench in the aluminum oxide layer corresponding to the line;

plating at least one pole layer, the at least one pole layer being magnetic, a portion of the at least one pole layer residing in the trench and having a height and a width, the height being at least twelve times the width;

removing a portion of the nonmagnetic layer adjacent to the at least one pole layer;

removing a portion of the seed layer exposed by the pole; and

performing an aluminum oxide backfill.

Assignments (6)