IP Library Granted Patent US 8,183,570
Granted Patent B2
US 8,183,570 · App. 12/946,953 · Granted May 22, 2012

Thin film transistor array panel

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Quick Facts
Patent No.
US 8,183,570
App. No.
12/946,953
Granted
May 22, 2012
Kind
B2
Abstract

A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.

Claims (16)

1. A thin film transistor array panel comprising:

a substrate including a display area and a peripheral area;

a gate metal layer disposed in the peripheral area of the substrate;

a gate insulating layer disposed on the gate metal layer;

a semiconductor disposed on the gate insulating layer;

a source electrode disposed on the semiconductor;

a first drain electrode facing the source electrode on the semiconductor;

a passivation layer disposed on the first drain electrode; and

a connecting member disposed on the passivation layer, wherein the connecting member overlaps a portion of the source electrode, and is electrically connected to the gate metal layer.

2. The thin film transistor array panel of claim 1 , wherein a portion of the gate metal layer overlaps a portion of the source electrode.

3. The thin film transistor array panel of claim 2 , wherein the semiconductor comprises one of a polysilicon semiconductor and an oxide semiconductor.

4. The thin film transistor array panel of claim 1 , wherein the gate insulating layer comprises a first opening, the passivation layer comprises a second opening positioned at the same position as the first opening, and the contact hole comprises the first opening and the second opening.

5. The thin film transistor array panel of claim 1 , wherein the connecting member comprises one of indium tin oxide (ITO) and indium zinc oxide (IZO).

6. The thin film transistor array panel of claim 1 , further comprising:

a thin film transistor disposed on the display area; and

a pixel electrode connected to the thin film transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029045/0860 →