Low-inductance, high-efficiency induction machine and method of making same

1. An electric drive system comprising:

an induction machine;

a power converter electrically coupled to the induction machine to drive the induction machine, the power converter comprising a plurality of silicon carbide (SiC) switching devices; and

a controller electrically coupled to the power converter and programmed to transmit switching signals to the plurality of SiC switching devices at a given switching frequency such that a peak-to-peak current ripple is less than approximately five percent.

2. The electric drive system of claim 1 wherein the plurality of SiC switching devices comprise a plurality of SiC metal-oxide-semiconductor field effect transistors (MOSFETs).

3. The electric drive system of claim 1 wherein the plurality of SiC switching devices are capable of switching at a frequency of at least 50 kHz.

4. The electric drive system of claim 1 wherein the power converter further comprises a plurality of diodes connected in an anti-parallel arrangement with the plurality of SiC MOSFETs.

5. The electric drive system of claim 1 wherein the power converter is a multi-phase power converter comprising N phases, where N is one of 2, 3, 4, 5, 6, 7, 8, and 9; and

wherein the induction machine comprises N phase windings.

6. The electric drive system of claim 1 wherein the power converter is a single-phase power converter.

7. The electric drive system of claim 1 wherein the controller is a pulse-width modulated (PWM) controller programmed to generate a PWM signal for controlling the plurality of SiC switching devices.

8. A method of manufacturing an electric drive system comprising the steps of:

providing an induction machine having a given leakage inductance;

providing a silicon carbide (SiC) power converter having a plurality of SiC switching devices, wherein the SiC power converter is coupleable a power source;

providing a controller, wherein the controller is programmed transmit switching signals to the plurality of SiC switching devices at a rate that minimizes a current ripple capable of being generated due to the given leakage inductance of the induction machine; and

coupling the SiC power converter to the induction machine to drive the induction machine and to the controller.

9. The method of claim 8 wherein providing the SiC power converter comprises providing a MOSFET SiC power converter having a plurality of metal-oxide-semiconductor field effect transistors (MOSFETs).

10. The method of claim 9 wherein providing the controller comprises providing a SiC switching controller programmed to cause the plurality of SiC switching devices to switch at a rate of at least 50 kHz.

11. The method of claim 8 wherein the providing the controller comprises providing a pulse-width modulated (PWM) controller programmed to generate a PWM signal for controlling the plurality of SiC switching devices.

12. The method of claim 8 wherein providing the SiC power converter comprises providing a power converter having one of 1, 2, 3, 4, 5, 6, 7, 8, and 9 phases.

13. The method of claim 12 wherein providing the SiC power converter comprises providing a three-phase power converter.

14. The method of claim 8 wherein providing the induction machine comprises providing an induction machine having one of 3, 5, 7, and 9 phase windings.

15. A vehicle drive system comprising:

a power converter electrically coupled to an induction motor to drive the induction motor, wherein the power converter comprises a plurality of silicon carbide (SiC) switching devices, and wherein the induction motor is designed to have a given leakage inductance; and

a controller programmed to send switching signals to the plurality of SiC switching devices to cause the SiC switching devices to switch at a rate that minimizes current ripple generated due to the given leakage inductance of the induction motor.

16. The vehicle drive system of claim 15 wherein the plurality of SiC switching devices comprise a plurality of SiC metal-oxide-semiconductor field effect transistors (MOSFETs).

17. The vehicle drive system of claim 15 wherein the plurality of SiC switching devices are capable of operating at a switching frequency of at least 50 kHz.

18. The vehicle drive system of claim 15 wherein the controller is a pulse-width modulated (PWM) controller programmed to generate a PWM signal for controlling the plurality of SiC switching devices.

19. The vehicle drive system of claim 15 further comprising a voltage source coupled to a DC link and configured to provide a source voltage to the DC link.

20. The vehicle drive system of claim 19 wherein the voltage source comprises a DC source comprising at least one of a battery, an ultracapacitor, and a flywheel.

21. The vehicle drive system of claim 19 wherein the voltage source comprises a DC source and a bi-directional DC-to-DC voltage converter configured to boost a voltage of the DC source to a DC link voltage.

22. The vehicle drive system of claim 21 the DC source comprises at least one of a battery, an ultracapacitor, and a flywheel.

23. The vehicle drive system of claim 19 wherein the voltage source comprises an AC source and a rectifier configured to convert a voltage of the AC source to a DC link voltage.

24. The electric drive system of claim 1 wherein the peak-to-peak current ripple is defined based on a current ripple factor, k ripple , according to:

k

ripple

=

1

I

m

⁢

⁢

a

⁢

⁢

x

⁢

V

D

⁢

⁢

C

⁢

T

s

4

⁢

⁢

L

σ

where I max is a peak fundamental phase current V DC is a DC bus voltage, T S is a switching period, and L σ is a machine transient inductance.