IP Library Granted Patent US 8,373,334
Granted Patent B2
US 8,373,334 · App. 12/950,708 · Granted Feb 12, 2013

Piezoelectric vibrating reed, piezoelectric vibrator, method of manufacturing piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled timepiece

Inventor: Kiyoshi Aratake (Chiba, JP)
Assignee: Seiko Instruments Inc.
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Quick Facts
Patent No.
US 8,373,334
App. No.
12/950,708
Granted
Feb 12, 2013
Kind
B2
Abstract

There are provided a piezoelectric vibrating reed which can be reliably bonded ultrasonically and which can be efficiently manufactured, a piezoelectric vibrator, a method of manufacturing a piezoelectric vibrator, an oscillator, an electronic apparatus, and a radio-controlled timepiece. A piezoelectric vibrating reed includes: a piezoelectric plate having vibrating portions and a base portion adjacent to the vibrating portions; excitation electrodes formed in the vibrating portions; mount electrodes formed in the base portion; lead-out electrodes for making the excitation electrodes and the mount electrodes electrically connected to each other; and a passivation film which is formed of an electrically insulating material and covers the excitation electrodes and the lead-out electrodes. These electrodes disposed on one surface of the base portion are formed only in a region covered by the passivation film.

Claims (27)

1. A piezoelectric vibrating reed comprising:

a first surface on which excitation electrodes are patterned;

a first insulating layer extensive to cover at least the entire excitation electrodes patterned on the first surface;

a second surface on which the excitation electrodes and mount electrodes electrically connected to the excitation electrodes are patterned; and

a second insulating layer extensive to cover at least the entire excitation electrodes patterned on the second surface but short to cover the at least a part of the mount electrodes.

2. The piezoelectric vibrating reed according to claim 1 , wherein the first and second insulating layers are extensive similarly.

3. The piezoelectric vibrating reed according to claim 1 , wherein the first and second insulating layers are as extensive as the excitation electrodes.

4. The piezoelectric vibrating reed according to claim 1 , wherein the first and second insulating layers are made of SiO 2 .

5. The piezoelectric vibrating reed according to claim 1 , wherein the excitation electrodes consist of a single layer made of Cr, and the mount electrodes comprise two metal layers made of Cr and Au.

6. A piezoelectric vibrator comprising:

a first substrate having conductive bumps formed thereon;

the piezoelectric vibrating reed according to claim 1 mounted on the first substrate, wherein the mount electrodes are electrically connected to the bumps; and

a second substrate which hermetically closes the first substrate with the piezoelectric vibrating reed inside therebetween.

7. An oscillator comprising the piezoelectric vibrator defined in claim 6 .

8. An electronic device comprising the piezoelectric vibrator defined in claim 6 .

9. The electronic device according to claim 8 , wherein the electronic device is an atomic clock.

10. A method of manufacturing a piezoelectric vibrator, comprising:

forming excitation electrodes on a first surface of a crystal piece and excitation electrodes and mount electrodes on a second surface of the crystal piece;

forming a first insulating layer extensive to cover at least the entire excitation electrodes formed on the first surface of the crystal piece; and

forming a second insulating layer extensive to cover at least the entire excitation electrode formed on the second surface of the crystal piece bur short to cover at least a part of the mount electrodes.

11. The method according to claim 10 , wherein forming excitation electrodes comprises forming excitation layers comparing two metal layers made of Cr and Au.

12. The method according to claim 11 , further comprising partially removing the Au layer from the excitation electrodes, wherein the first and second insulating layer are formed on the excitation electrodes where the Au layer is removed.

13. The method according to claim 10 , wherein the first and second insulating layers are made of SiO 2 .

14. The method according to claim 10 , wherein the first and second insulating layers are formed using a CVD method.

15. The method according to claim 10 , wherein forming a first insulating layer comprises placing a metal mask on the first surface of the crystal piece and applying the first insulating layer on the metal mask to form the first insulating layer only to cover at least the entire excitation electrode formed on the first surface of the crystal piece.

16. The method according to claim 15 , wherein forming a second insulating layer comprises placing the same metal mask on the second surface of the crystal piece and applying the second insulating layer on the metal mask to form the second insulating layer to cover at least the entire excitation electrode formed on the second surface of the crystal piece but short to cover at least a part of the mount electrode.

17. The method according to claim 10 , further comprising forming a weight film on the crystal piece and removing a part of the weight film by a laser to adjust a frequency of the piezoelectric vibrator.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 26, 2013
From: SEIKO INSTRUMENTS INC.
To: SII CRYSTAL TECHNOLOGY INC.
Reel/Frame 031085/0852 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 22, 2010
From: ARATAKE, KIYOSHI
To: SEIKO INSTRUMENTS INC.
Reel/Frame 025388/0828 →
Priority Claims (1)
JP 2009-270469 · Nov 27, 2009 · national
Continuity (1)
Related Publication 20110127882A1 · Jun 2, 2011