Nitride semiconductor light-emitting device
View Patent ↗A nitride semiconductor light-emitting device includes an n type nitride semiconductor layer, a light-emitting layer formed on the n type nitride semiconductor layer, a first p type nitride semiconductor layer formed on the light-emitting layer, an intermediate layer formed on the first p type nitride semiconductor layer to alternately cover and expose a surface of the first p type nitride semiconductor layer, and a second p type nitride semiconductor layer formed on the intermediate layer. The intermediate layer is made of a compound containing Si and N as constituent elements.
1. A nitride semiconductor light-emitting device comprising:
an n type nitride semiconductor layer;
a light-emitting layer formed on said n type nitride semiconductor layer;
a first p type nitride semiconductor layer formed on said light-emitting layer;
an intermediate layer formed on said first p type nitride semiconductor layer to alternately cover and expose a surface of said first p type nitride semiconductor layer; and
a second p type nitride semiconductor layer formed on said intermediate layer,
said intermediate layer being made of a compound containing Si and N as constituent elements, and
said second p type nitride semiconductor layer being separated into a plurality of convex portions that are physically separated from each other.
2. The nitride semiconductor light-emitting device according to claim 1 , wherein said intermediate layer is patterned and formed by natural formation.
3. The nitride semiconductor light-emitting device according to claim 1 , further comprising a p side translucent conductive layer formed on said second p type nitride semiconductor layer, wherein said nitride semiconductor light-emitting device is a nitride semiconductor light-emitting diode device.
4. The nitride semiconductor light-emitting device according to claim 3 , wherein said p side translucent conductive layer includes at least one of indium tin oxide, tin dioxide, and zinc oxide.
5. The nitride semiconductor light-emitting device according to claim 1 , wherein a surface of said first p type nitride semiconductor layer which is in contact with said intermediate layer is a p type GaN layer.
6. The nitride semiconductor light-emitting device according to claim 1 , wherein
a surface of said second p type nitride semiconductor layer which is in contact with said intermediate layer is a p type GaN layer.
7. The nitride semiconductor light-emitting device according to claim 1 , wherein said intermediate layer has a thickness of not more than 10 nm.