Atomic layer deposition apparatus
A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
1. A method of depositing a material layer on a substrate comprising:
(a) positioning a substrate on a wafer support in a deposition chamber comprising a first deposition region and a second deposition region, wherein the first and second deposition regions are integrally connected to one another, and wherein the wafer support is movable between the first and second deposition regions;
(b) pulsing a first deposition gas into the first deposition region and pulsing a second deposition gas into the second deposition region;
(c) moving the wafer support with the substrate thereon into the first deposition region wherein a first monolayer of the first deposition gas is chemisorbed onto the surface of the substrate;
(d) moving the wafer support with the substrate thereon into the second deposition region wherein a first monolayer of the second deposition gas is chemisorbed on the first monolayer of the first deposition gas; and
(e) repeating steps (c) and (d) until a material layer having a desired thickness is achieved.
2. The method of claim 1 , wherein step (c) further comprises:
moving the substrate support vertically.
3. The method of claim 1 , wherein step (c) further comprises:
moving the substrate support horizontally.
4. The method of claim 1 further comprising:
flowing an inert gas between the deposition regions.
5. A method of depositing a material layer on a substrate comprising:
exposing a substrate positioned in a first deposition region of a deposition chamber to a first deposition gas, a first monolayer of the first deposition gas is chemisorbed onto the surface of the substrate;
moving the substrate having the first monolayer chemisorbed thereon from the first deposition region to a second deposition region of the deposition chamber; and
exposing the substrate positioned in the second deposition region of the deposition chamber to a second deposition gas, wherein a first monolayer of the second deposition gas is chemisorbed on the first monolayer of the first deposition gas, wherein the first and second deposition gases are pulsed into the deposition chamber while flowing an inert gas between the first and second deposition regions.
6. The method of claim 5 further comprising:
cyclically exposing the substrate to the first and the second deposition gases until a material layer having a desired thickness is formed.
7. The method of claim 6 wherein cyclically exposing the substrate to the first and the second deposition gases further comprises:
cyclically moving the substrate between the first deposition region for exposure to the first deposition gas and the second deposition region for exposure to the second deposition gas.
8. The method of claim 5 , wherein moving the substrate from the first deposition region to the second deposition region further comprises:
moving the substrate vertically.
9. The method of claim 5 , wherein moving the substrate from the first deposition region to the second deposition region further comprises:
moving the substrate horizontally.
10. The method of claim 5 further comprising:
regulating pressure within the first deposition region independently from pressure regulated within the second deposition region.
11. The method of claim 5 further comprising:
proving laminar flow of gas around an aperture separating the first and second deposition regions.
12. The method of claim 5 , wherein moving the substrate from the first deposition region to the second deposition region further comprises:
passing the substrate through a sealable aperture separating the first and second deposition regions.
13. The method of claim 5 , wherein moving the substrate from the first deposition region to the second deposition region further comprises:
moving a substrate support having the substrate disposed thereon from the first deposition region to the second deposition region.
14. The method of claim 13 , wherein moving the substrate from the first deposition region to the second deposition region further comprises:
moving a substrate support having the substrate disposed thereon through a sealable aperture separating the first and second deposition regions.
15. The method of claim 13 , wherein moving the substrate from the first deposition region to the second deposition region further comprises:
moving a substrate support having the substrate disposed thereon through a laminar flow of inert gas.