Indium tin oxide target, method for manufacturing the same, transparent conductive film of indium tin oxide, and method for manufacturing transparent conductive film of indium tin oxide
View Patent ↗Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of Sm 2 O 3 and Yb 2 O 3 , wherein an amount of the oxide is about 0.5 wt. % to about 10 wt. % based on the weight of the target.
1. A transparent conductive film of an indium tin oxide, wherein:
the film is deposited on a substrate using an indium tin oxide target in a DC sputtering scheme, the indium tin oxide target including Sm 2 O 3 and Yb 2 O 3 , and
the film contains the oxide in an amount of about 0.5 to 10 wt. %, wherein:
the film includes Sm 2 O 3 and Yb 2 O 3 , and
[Sm]/([In]+[Sm]) is about 0.005 to 0.18, and [Yb]/([In]+[Yb]) is about 0.005 to 0.18,
wherein [Sm] is a number of samarium atoms per unit mass of the target, [Yb] is a number of ytterbium atoms per unit mass of the target, and [In] is a number of indium atoms per unit mass of the target.
2. The film of claim 1 , wherein the film has a light transmittance of about 80% or more in a wavelength of about 550 nm.
3. The film of claim 1 , wherein the film is an amorphous film or crystalline film.
4. The film of claim 1 , wherein a resistivity of the film is about 150 to 500 μΩcm.
5. A method for manufacturing an indium tin oxide target, the method comprising:
mixing Sm 2 O 3 powder and Yb 2 O 3 powder with In 2 O 3 powder and SnO 2 powder to prepare a mixed powder;
mixing and wet milling the mixed powder, a dispersing agent, and a dispersion medium to prepare a slurry;
drying the slurry to prepare a granular powder;
molding the granular powder to form a molded body; and
sintering the molded body,
wherein an amount of the oxide powder is about 0.5 to 10 wt. % based on the weight of the mixed powder, and the mixed powder includes the Sm 2 O 3 powder and Yb 2 O 3 powder, and
[Sm]/([In]+[Sm]) is about 0.005 to 0.18 and [Yb]/([In]+[Yb]) is about 0.005 to 0.18, wherein [Sm] is a number of samarium atoms per unit mass of the target, [Yb] is a number of ytterbium atoms per unit mass of the target, and [In] is a number of indium atoms per unit mass of the target.
6. The method of claim 5 , wherein the sintering of the molded body is performed at about 1,400° C. to 1,650° C. in a chamber under an air atmosphere.
7. The method of claim 5 , wherein the sintering of the molded body is performed at about 1,400° C. to 1,650° C. in a chamber where an air atmosphere and an oxygen-free atmosphere are alternatively provided.