Organic light emitting display apparatus and method of manufacturing the same

1. An organic light emitting display device comprising:

a substrate having a display area and a non-display area;

a thin film transistor in the display area;

a wiring portion in the non-display area;

an intermediate layer electrically connected to the thin film transistor and comprising an organic light emitting layer; and

a counter electrode on the intermediate layer,

wherein the thin film transistor comprises an active layer, a gate electrode insulated from the active layer, and source/drain electrodes that are insulated from the gate electrode and electrically connected to the active layer,

wherein the source/drain electrodes comprise a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked,

wherein the wiring portion comprises a same material as the first conductive layer and a different material from the second conductive layer and the third conductive layer,

wherein one of the source/drain electrodes is longer than an other of the source/drain electrodes, to function as a pixel electrode, and

wherein the one of the source/drain electrodes and the intermediate layer are electrically connected to each other.

2. The organic light emitting display device of claim 1 , further comprising a pixel defining layer having an opening portion, on the source/drain electrodes, wherein the intermediate layer is at the opening portion and contacts the one of the source/drain electrodes via the opening portion.

3. The organic light emitting display device of claim 1 , wherein the first conductive layer comprises Ti.

4. The organic light emitting display device of claim 1 , wherein the third conductive layer comprises at least one selected from the group consisting of ITO, IZO, ZnO, and In 2 O 3 .

5. The organic light emitting display device of claim 1 , further comprising:

a capacitor first electrode in a same layer as the active layer and comprising a same material as the active layer; and

a capacitor second electrode insulated from the capacitor first electrode and above the capacitor first electrode, in a same layer as the gate electrode and comprising a same material as the gate electrode, to correspond to the capacitor first electrode.

6. The organic light emitting display device of claim 5 , wherein the capacitor first electrode and the capacitor second electrode are below the one of the source/drain electrodes.

7. An organic light emitting display device comprising:

a substrate having a display area and a non-display area;

a thin film transistor in the display area;

a wiring portion in the non-display area;

an intermediate layer electrically connected to the thin film transistor and comprising an organic light emitting layer; and

a counter electrode on the intermediate layer,

wherein the thin film transistor comprises an active layer, a gate electrode insulated from the active layer, and source/drain electrodes that are insulated from the gate electrode and electrically connected to the active layer,

wherein the source/drain electrodes comprise a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked,

wherein the wiring portion comprises a same material as the first conductive layer,

wherein one of the source/drain electrodes is longer than an other of the source/drain electrodes, to function as a pixel electrode,

wherein the one of the source/drain electrodes and the intermediate layer are electrically connected to each other, and

wherein the second conductive layer comprises Ag.

8. An organic light emitting display device comprising:

a substrate having a display area and a non-display area;

a thin film transistor in the display area;

a wiring portion in the non-display area;

an intermediate layer electrically connected to the thin film transistor and comprising an organic light emitting layer; and

a counter electrode on the intermediate layer,

wherein the thin film transistor comprises an active layer, a gate electrode insulated from the active layer, and source/drain electrodes that are insulated from the gate electrode and electrically connected to the active layer,

wherein the source/drain electrodes comprise a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked,

wherein the wiring portion comprises a same material as the first conductive layer,

wherein one of the source/drain electrodes is longer than an other of the source/drain electrodes, to function as a pixel electrode,

wherein the one of the source/drain electrodes and the intermediate layer are electrically connected to each other,

wherein the organic light emitting display device further comprises a planarization layer on the gate electrode that insulates the gate electrode from the source/drain electrodes, and

wherein the source/drain electrodes are on the planarization layer.

9. A method of manufacturing an organic light emitting display device on a substrate having a display area and a non-display area, the method comprising:

forming a thin film transistor in the display area;

forming a wiring portion in the non-display area;

forming an intermediate layer electrically connected to the thin film transistor and comprising an organic light emitting layer; and

forming a counter electrode on the intermediate layer,

wherein the forming of the thin film transistor comprises forming an active layer, forming a gate electrode insulated from the active layer, and forming source/drain electrodes that are insulated from the gate electrode and electrically connected to the active layer,

wherein the source/drain electrodes comprise a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked,

wherein the wiring portion comprises a same material as the first conductive layer and a different material from the second conductive layer and the third conductive layer,

wherein one of the source/drain electrodes is longer than an other of the source/drain electrodes, to function as a pixel electrode, and

wherein the one of the source/drain electrodes and the intermediate layer are electrically connected to each other.

10. The method of claim 9 , wherein the forming of the source/drain electrodes and the forming of the wiring portion take place concurrently.

11. The method of claim 9 , further comprising forming a pixel defining layer comprising an opening portion, on the source/drain electrodes, wherein the intermediate layer is at the opening portion and contacts the one of the source/drain electrodes via the opening portion.

12. The method of claim 9 , wherein the first conductive layer comprises Ti.

13. The method of claim 9 , wherein the third conductive layer comprises at least one selected from the group consisting of ITO, IZO, ZnO, and In 2 O 3 .

14. The method of claim 9 , further comprising:

forming a capacitor first electrode in a same layer as the active layer and of a same material as the active layer; and

forming a capacitor second electrode insulated from the capacitor first electrode and above the capacitor first electrode, in a same layer as the gate electrode and of a same material as the gate electrode, to correspond to the capacitor first electrode.

15. The method of claim 14 , wherein the capacitor first electrode and the capacitor second electrode are below the one of the source/drain electrodes.

16. The method of claim 14 , wherein the forming of the active layer and the forming of the capacitor first electrode take place concurrently.

17. The method of claim 14 , wherein the forming of the gate electrode and the forming of the capacitor second electrode take place concurrently.

18. A method of manufacturing an organic light emitting display device on a substrate having a display area and a non-display area, the method comprising:

forming a thin film transistor in the display area;

forming a wiring portion in the non-display area;

forming an intermediate layer electrically connected to the thin film transistor and comprising an organic light emitting layer; and

forming a counter electrode on the intermediate layer,

wherein the forming of the thin film transistor comprises forming an active layer, forming a gate electrode insulated from the active layer, and forming source/drain electrodes that are insulated from the gate electrode and electrically connected to the active layer,

wherein the source/drain electrodes comprise a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked,

wherein the wiring portion comprises a same material as the first conductive layer,

wherein one of the source/drain electrodes is longer than an other of the source/drain electrodes, to function as a pixel electrode, and

wherein the one of the source/drain electrodes and the intermediate layer are electrically connected to each other, and

wherein the second conductive layer comprises Ag.

19. A method of manufacturing an organic light emitting display device on a substrate having a display area and a non-display area, the method comprising:

forming a thin film transistor in the display area;

forming a wiring portion in the non-display area;

forming an intermediate layer electrically connected to the thin film transistor and comprising an organic light emitting layer; and

forming a counter electrode on the intermediate layer,

wherein the forming of the thin film transistor comprises forming an active layer, forming a gate electrode insulated from the active layer, and forming source/drain electrodes that are insulated from the gate electrode and electrically connected to the active layer,

wherein the source/drain electrodes comprise a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked,

wherein the wiring portion comprises a same material as the first conductive layer,

wherein one of the source/drain electrodes is longer than an other of the source/drain electrodes, to function as a pixel electrode, and

wherein the one of the source/drain electrodes and the intermediate layer are electrically connected to each other,

wherein the method further comprises forming a planarization layer on the gate electrode that insulates the gate electrode from the source/drain electrodes, and

wherein the source/drain electrodes are on the planarization layer.