Method for coating dielectric composition for fabricating thin-film transistors
An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.
1. A process for fabricating an electronic device having a dielectric layer on a substrate, comprising:
depositing a dielectric composition on the substrate, the dielectric composition comprising a dielectric material, a crosslinking agent, and a thermal acid generator; and
heating the dielectric composition to cure the dielectric composition, forming the dielectric layer on the substrate;
wherein the dielectric material comprises a silicon-containing material selected from the group consisting of silsesquioxane, a polyhedral oligomeric silsesquioxane, a poly(silsesquioxane), a polyacrylate comprising a silane group, a polyvinyl comprising a silane group, a polyimide comprising a silane group, a polyester comprising a silane group, a polyether comprising a silane group, a polyketone comprising a silane group, or a polysulfone comprising a silane group; and
wherein the dielectric material comprises a lower-k dielectric polymer and a higher-k dielectric polymer; and wherein the silicon-containing material is the lower-k dielectric polymer.
2. The process of claim 1 , wherein the thermal acid generator is a hydrocarbylsulfonic acid blocked or neutralized with amine.
3. The process of claim 1 , wherein the thermal acid generator is present in the amount of from about 0.001 to about 3 wt % of the dielectric material.
4. The process of claim 1 , wherein the lower-k dielectric polymer has a dielectric constant of less than 4.0.
5. The process of claim 1 , wherein the higher-k dielectric polymer has a dielectric constant of 4.0 or higher.
6. The process of claim 1 , wherein the dielectric composition is heated at a temperature of from about 80° C. to about 140° C.
7. The process of claim 1 , wherein the dielectric composition is heated for a period of from about 0.5 minutes to about 10 minutes.
8. The process of claim 1 , wherein the dielectric composition is heated for a period of from about 0.5 minutes to about 5 minutes.
9. The process of claim 1 , wherein the silicon-containing material is an acid-sensitive dielectric material selected from the group consisting of a silsesquioxane, a polyhedral oligomeric silsesquioxane, a poly(silsesquioxane), and combinations thereof; and
wherein the higher-k dielectric polymer is selected from the group consisting of a polyimide, a polyester, a polyether, a polyacrylate, a polyvinyl, a polyketone, a polysulfone, a molecular glass compound, and combinations thereof.
10. The process of claim 1 , wherein the thermal acid generator is a hydrocarbylsulfonic acid blocked or neutralized with amine.
11. The process of claim 1 , wherein the thermal acid generator is a polymeric blocked sulfonic acid ester, an amine neutralized substituted naphthalenesulonic acid, an amine neutralized substituted benzenesulonic acid, or an amine neutralized acid phosphate.
12. The process of claim 1 , wherein the thermal acid generator is present in the amount of from about 0.001 to about 3 wt % of the dielectric composition.
13. A process for fabricating an electronic device, comprising:
depositing a dielectric composition on a substrate, the dielectric composition comprising a dielectric material, a crosslinking agent, and a thermal acid generator; and
heating the dielectric composition to cure the dielectric composition, forming a dielectric layer on the substrate;
wherein the dielectric material comprises a a higher-k dielectric polymer and a lower-k dielectric polymer containing a silane group, wherein the lower-k dielectric polymer containing a silane group is selected from the group consisting of
wherein x and y are molar fractions.