Solid-state image pickup device with a wiring becoming a light receiving surface, method of manufacturing the same, and electronic apparatus

1. A solid-state image pickup device, comprising:

a plurality of pixels each composed of a photoelectric conversion element formed in a semiconductor substrate for generating and accumulating signal electric charges corresponding to a light quantity of incident light, and an electric charge reading portion formed on a front surface side of said semiconductor substrate for reading out the signal electric charges generated and accumulated in said photoelectric conversion element;

a wiring for a substrate potential formed on a back surface side, of said semiconductor substrate for supplying a desired voltage to said semiconductor substrate, the back surface side being a light receiving surface; and

a back surface side contact portion through which said wiring for a substrate potential and said semiconductor substrate are electrically connected to each other.

2. The solid-state image pickup device according to claim 1 , further comprising:

a back surface side electrode pad connected to said wiring for a substrate potential on the back surface side of said semiconductor substrate; and

an opening portion through which said back surface side electrode pad is exposed to the light receiving surface on an upper portion of said back surface side electrode pad.

3. The solid-state image pickup device according to claim 1 , further comprising:

a multilayer wiring layer composed of a plurality of wirings formed on the front surface side of said semiconductor substrate through a front surface side interlayer insulating film; and

a front surface side contact portion through which the desired one(s) of said multilayer wiring layer, and said semiconductor substrate are electrically connected to each other;

wherein,

a desired voltage is supplied from the wiring of said multilayer wiring layer to said wiring for a substrate potential through said front surface side contact portion, said semiconductor substrate, and said back surface side contact portion.

4. The solid-state image pickup device according to claim 1 , wherein said back surface side contact portion is formed for every pixel on at least a one-by one basis.

5. The solid-state image pickup device according to claim 1 , wherein said back surface contact portion is shared among the plurality of pixels.

6. The solid-state image pickup device according to claim 1 , wherein said back surface side contact portion is formed between the adjacent pixels.

7. The solid-state image pickup device according to claim 1 , wherein said back surface side contact portion is formed so as to surround a circumference of said photoelectric conversion element.

8. The solid-state image pickup device according to claim 1 , wherein said wiring for a substrate potential is composed of a light blocking film for light-blocking a boundary between the adjacent pixels.

9. The solid-state image pickup device according to claim 1 , wherein the pixel is structured so as to be either of a metal oxide semiconductor type or of a charge coupled device type.

10. A method of manufacturing a solid-state image pickup device, comprising the steps of:

forming a plurality of pixels each composed of a photoelectric conversion element formed in a semiconductor substrate for generating and accumulating signal electric charges corresponding to a light quantity of incident light, and an electric charge reading portion formed on a front surface side of said semiconductor substrate for reading out the signal electric charges generated and accumulated in said photoelectric conversion element;

forming a back surface side interlayer insulating film on a back surface side of said semiconductor substrate, said back surface side being a light receiving surface;

forming a contact hole in said back surface side interlayer insulating film, and forming a back surface side contact portion by filling a desired metallic material in said contact hole; and

forming a metallic film over an upper portion of said back surface side interlayer insulating film including said back surface side contact portion, and forming a wiring for a substrate potential electrically connected to said semiconductor substrate by patterning said metallic film into a desired shape, a desired voltage being applied to said semiconductor substrate through said wiring for a substrate potential.

11. The method of manufacturing a solid-state image pickup device according to claim 10 , wherein the step of filling said metallic material in said contact hole, and the step of forming said metallic film over said upper portion of said back surface side interlayer insulating film including said back surface side contact portion are carried out at the same time.

12. The method of manufacturing a solid-state image pickup device according to claim 10 , wherein said wiring for a substrate potential is formed between the adjacent pixels, and is made a light blocking film for light-blocking a boundary between the adjacent pixels.

13. The method of manufacturing a solid-state image pickup device according to claim 10 , wherein a back surface side electrode pad is formed so as to be connected to said wiring for a substrate potential, and an opening portion is formed so as for said back surface side electrode pad to be exposed to the light receiving surface side.

14. The method of manufacturing a solid-state image pickup device according to claim 10 , further comprising the steps of:

forming a plurality of wirings on the front surface side of said semiconductor substrate through a front surface side interlayer insulating film, thereby forming a multilayer wiring layer; and

forming a front surface side contact portion through which a desired wiring(s) of said multilayer wiring layer and said semiconductor substrate are electrically connected to each other.

15. An electronic apparatus, comprising:

(a) an optical lens;

(b) a solid-state image pickup device to which a light condensed by said optical lens is made incident, said solid-state image pickup device including

( 1 ) a plurality of pixels each composed of a photoelectric conversion element formed in a semiconductor substrate for generating and accumulating signal electric charges corresponding to a light quantity of incident light, and an electric charge reading portion formed on a front surface side of said semiconductor substrate for reading out the signal electric charges generated and accumulated in said photoelectric conversion element,

( 2 ) a wiring for a substrate potential formed on a back surface side of said semiconductor substrate for supplying a desired voltage to said semiconductor substrate, the back surface side being a light receiving surface, and

( 3 ) a back surface side contact portion through which said wiring for a substrate potential and said semiconductor substrate are electrically connected to each other; and

(c) a signal processing circuit for processing an output signal from said solid-state image pickup device.