Thin layer chromatography plates and related methods

1. A method for manufacturing a thin layer chromatography plate, the method comprising:

forming a catalyst layer disposed on a substrate that includes a first portion and at least a second portion, each of the first and at least a second portions exhibiting a selected non-linear configuration;

forming a layer of elongated nanostructures on the first and at least a second portions of the catalyst layer, wherein the layer of elongated nanostructures includes a first portion grown on the first portion of the catalyst layer and at least a second portion grown on the at least a second portion of the catalyst layer;

at least partially coating the elongated nanostructures with a coating, the coating including at least one of a stationary phase or a precursor of a stationary phase for use in chromatography; and

after the act of at least partially coating the elongated nanostructures with a coating, at least partially removing the elongated nanostructures.

2. The method as recited in claim 1 , wherein the coating that at least partially coats the elongated nanostructures defines respective elongated structures that extend longitudinally away from the substrate.

3. The method as recited in claim 1 , wherein the catalyst layer comprises iron, nickel, copper, cobalt, alloys thereof, or combinations thereof.

4. The method as recited in claim 1 , wherein the substrate comprises a backing layer on which the catalyst layer is disposed, the backing layer including at least one material selected from the group consisting of silica, silicon, nickel alumina, borosilicate glass, and steel.

5. The method as recited in claim 1 , wherein the catalyst layer exhibits a thickness between about 0.5 nm and about 5 nm.

6. The method as recited in claim 1 , wherein forming the layer of elongated nanostructures on the first and at least a second portions of the catalyst layer comprises growing a layer of carbon nanotubes.

7. The method as recited in claim 6 , wherein the substrate and the catalyst layer are heated to between about 600° C. and about 900° C. during the act of growing the layer of carbon nanotubes.

8. The method as recited in claim 1 , wherein at least partially coating the elongated nanostructures with a coating comprises forming the coating to include at least one material selected from the group consisting of silicon, silicon dioxide, silicon nitride, aluminum, aluminum oxide, titanium, titanium oxide, zirconium, and zirconium oxide.

9. The method as recited in claim 8 , wherein forming the coating to include at least one material selected from the group consisting of silicon, silicon dioxide, silicon nitride, aluminum, aluminum oxide, titanium, titanium oxide, zirconium, and zirconium oxide comprises at least partially infiltrating the elongated nanostructures by low pressure chemical vapor deposition with an infiltrant.

10. The method as recited in claim 9 , wherein the low pressure chemical vapor deposition process is carried out at a temperature between about 500° C. and about 650° C. and a pressure between about 100 mTorr and about 300 mTorr.

11. The method as recited in claim 1 , wherein at least partially removing the elongated nanostructures comprises oxidizing the coating that at least partially coats the elongated nanostructures so that a plurality of stationary phase structures are formed and oxidizing the elongated nanostructures so that the elongated nanostructures are substantially removed.

12. The method as recited in claim 11 , further comprising functionalizing the plurality of stationary phase structures.

13. The method as recited in claim 1 , further comprising heating the elongated nanostructures in an oxidizing environment so that the elongated nanostructures are substantially removed.

14. The method as recited in claim 1 , wherein each of the first and at least a second portions of the catalyst layer form a zigzag pattern.