Light emitting device

1. A light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers;

a first ohmic layer physically contacted with an upper surface of light emitting structure; and

a second ohmic layer including a light extraction pattern having holes and physically contacted with an upper surface of the first ohmic layer,

wherein the second ohmic layer is formed of a material identical to a material of the first ohmic layer,

wherein a chemical binding energy between materials constituting of the second ohmic layer is lower than a chemical binding energy between materials constituting of the first ohmic layer,

wherein a boundary surface disposed between the first and second ohmic layers is formed by a difference between the chemical binding energies and is a surface adjusting a depth of the light extraction pattern by the difference of the chemical binding energies,

wherein the second ohmic layer including the light extraction pattern is located at a higher position than that of the upper surface of the first ohmic layer and the boundary surface,

wherein the second ohmic layer including the light extraction pattern is not contacted with the upper surface of the second conductive semiconductor layer,

wherein each of the plurality of holes of the second ohmic lager has a depth the same as a thickness of the second ohmic layer,

wherein the depth of the light extraction pattern is the depth of the each of the plurality of holes, and

wherein the second ohmic layer directly contacts a first electrode,

wherein the first and second ohmic layers formed of an oxide layer, and

wherein the oxide layer does not contain a nitride.

2. The light emitting device as claimed in claim 1 , wherein the first and second ohmic layers comprise at least one of ITO, IZO (In—ZnO), GZO (Ga—ZnO), AZO (Al—ZnO), AGZO (Al—GaZnO), IGZO (In—GaZnO), IrOx, and RuOx.

3. The light emitting device as claimed in claim 1 , wherein the light emitting structure is formed on a nonconductive substrate and the first ohmic layer is physically contacted with an upper surface of the second conductive semiconductor layer.

4. The light emitting device as claimed in claim 1 , further comprising a second electrode physically contacted with a lower surface of the second conductive semiconductor layer, wherein the first ohmic layer is physically contacted with an upper surface of the first conductive semiconductor layer.

5. The light emitting device as claimed in claim 4 , wherein the second electrode includes a reflective layer.

6. The light emitting device as claimed in claim 1 , wherein the light extraction pattern includes at least one of a photonic crystalline pattern and a concave-convex pattern.

7. The light emitting device as claimed in claim 1 , wherein the first and second ohmic layers are formed of a metal layer.

8. The light emitting device as claimed in claim 1 , wherein the light extraction pattern is filled with a dielectric substance.

9. The light emitting device as claimed in claim 1 , wherein the light extraction pattern is filled with air.

10. The light emitting device as claimed in claim 1 , wherein the first conductive semiconductor layer is physically contacted with the first ohmic layer and is formed of a p-type semiconductor layer.

11. The light emitting device as claimed in claim 1 , wherein the first conductive semiconductor layer is physically contacted with the first ohmic layer and is formed of an n-type semiconductor layer.

12. The light emitting device as claimed in claim 1 , wherein a ratio of the area of the second ohmic layer including the light extraction pattern relative to an area of a top surface of the light emitting device is about 5% to 95%.

13. The light emitting device as claimed in claim 1 , wherein the second ohmic layer has a density lower than that of the first ohmic layer.