Semiconductor power module package with temperature sensor mounted thereon and method of fabricating the same
View Patent ↗Provided are a semiconductor power module package and a method of fabricating the same. The semiconductor power module package includes a substrate, semiconductor chips arranged on a top surface of the substrate, and a temperature sensor mounted on a top surface of at least one of the semiconductor chips. The semiconductor chips and the temperature sensor are electrically connected to each other through leads. A sealing material covers the top surface of the substrate, the semiconductor chips, and the temperature sensor except for portions of the leads and a bottom surface of the substrate. The temperature sensor may include a thermistor, and the thermistor may include first and second electrode terminals connected to corresponding leads of the leads. A first wiring pattern may be in contact with the first electrode terminal, and a second wiring pattern may be in contact with the second electrode terminal.
1. A semiconductor power module package comprising:
a substrate;
at least one semiconductor chip arranged on a top surface of the substrate;
a temperature sensor mounted on a top surface of the at least one semiconductor chip, the temperature sensor further comprises a first and second electrode terminals;
a plurality of leads including a first and second leads electrically connected to the first and second electrode terminals of the temperature sensor, respectively;
an adhesive sheet attached to the top surface of the at least one semiconductor chip and disposed between the temperature sensor and the top surface of the at least one semiconductor chip; and
first and second wiring patterns attached to a top surface of the adhesive sheet, wherein the first and second wiring patterns are electrically connected the first and second electrode terminals of the temperature sensor through solders, respectively.
2. The semiconductor power module package of claim 1 , further comprising:
a sealing material covering the top surface of the substrate, the at least one semiconductor chip, and the temperature sensor except for portions of the plurality of leads and a bottom surface of the substrate.
3. The semiconductor power module package of claim 1 , wherein the temperature sensor comprises a thermistor.
4. The semiconductor power module package of claim 1 wherein the first and second leads are electrically connected to the first and second wiring patterns through wires, respectively.
5. The semiconductor power module package of claim 1 , wherein the first and second wiring patterns comprise metal patterns.
6. The semiconductor power module package of claim 1 , wherein the first and second wiring patterns comprise copper (Cu) patterns.
7. The semiconductor power module package of claim 1 , wherein the adhesive sheet comprises an insulation sheet having a high thermal conductivity.
8. The semiconductor power module package of claim 1 , wherein the substrate comprises:
a ceramic insulation layer;
an upper conductive layer disposed on a top surface of the ceramic insulation layer; and
a lower conductive layer deposited on a bottom surface of the ceramic insulation layer.
9. The semiconductor power module package of claim 8 , further comprising a heat sink, wherein the heat sink is coupled to the lower conductive layer.
10. The semiconductor power module package of claim 8 , wherein the upper conductive layer comprises a plurality of electrically separated conductive patterns.
11. The semiconductor power module package of claim 10 , wherein the plurality of conductive patterns comprise copper (Cu) patterns.
12. The semiconductor power module package of claim 10 , wherein solder pads are disposed between the at least one semiconductor chip and the top surfaces of the plurality of electrically separated conductive patterns.
13. The semiconductor power module package of claim 1 wherein the plurality of leads further comprise a third lead electrically connected to the at least one semiconductor chip.
14. The semiconductor power module package of claim 1 , wherein the at least one semiconductor chip is a semiconductor power chip.
15. The semiconductor power module package of claim 1 , further comprising at least one semiconductor control chip.