Apparatus for Fabricating Thin Film Transistor
In an apparatus for fabricating a thin film transistor, amorphous silicon is deposited on a substrate in a first multi-chamber and is crystallized into polycrystalline silicon without using a separate process chamber or multi-chamber, and the substrate deposited with the amorphous silicon is loaded into a second multi-chamber for forming electrodes, thereby making it possible to minimize a characteristic deviation and improve fabrication process efficiency. The apparatus includes a first multi-chamber in which amorphous silicon is deposited on a substrate, a second multi-chamber in which electrodes are formed on the substrate, and a loading/unloading chamber interposed between the first multi-chamber and the second multi-chamber. The loading/unloading chamber includes a substrate holder on a lower side thereof and a power voltage supplier on an upper side thereof.
1 . An apparatus for fabricating a thin film transistor, comprising:
a first multi-chamber in which amorphous silicon is deposited on a substrate;
a second multi-chamber in which electrodes are formed on the substrate; and
a loading/unloading chamber interposed between the first multi-chamber and the second multi-chamber;
wherein the loading/unloading chamber includes a substrate holder on a lower side thereof and a power voltage supplier on an upper side thereof.
2 . The apparatus according to claim 1 , wherein the substrate holder includes a substrate support for providing a space in which the substrate is placed, a holder elevator for raising and lowering the substrate support, and a holder driver for controlling the holder elevator.
3 . The apparatus according to claim 2 , wherein the substrate support includes means for clamping the substrate.
4 . The apparatus according to claim 3 , wherein the clamping means includes at least one vacuum hole connected to a vacuum pump.
5 . The apparatus according to claim 2 , further comprising means located on an outer circumference of the substrate support for aligning the substrate.
6 . The apparatus according to claim 2 , wherein the substrate support further includes at least one sensor for detecting a size of the substrate.
7 . The apparatus according to claim 1 , wherein the power voltage supplier includes a first electrode, a second electrode, and a power voltage source for applying power voltages having different polarities to the first and second electrodes.
8 . The apparatus according to claim 7 , wherein the power voltage supplier further includes a controller for adjusting an interval between the first electrode and the second electrode.
9 . The apparatus according to claim 7 , wherein the power voltage supplier further includes a first electrode transfer part for moving the first electrode, a second electrode transfer part for moving the second electrode, and a mobile guide for providing movement paths of the first and second electrode transfer parts.
10 . The apparatus according to claim 9 , wherein:
the mobile guide includes a first mobile guide for providing the movement path of the first electrode transfer part, and a second mobile guide for providing the movement path of the second electrode transfer part; and
the first mobile guide is spaced a predetermined distance apart from the second mobile guide.
11 . The apparatus according to claim 10 , wherein:
the first and second mobile guides include guide grooves formed in a lengthwise direction thereof; and
the first and second electrode transfer parts include protrusions corresponding to the guide holes.
12 . The apparatus according to claim 1 , wherein the second multi-chamber includes process chambers for performing a sputtering process.
13 . The apparatus according to claim 1 , further comprising gate valves installed between the first multi-chamber and the loading/unloading chamber, and between the loading/unloading chamber and the second multi-chamber.