Manufacturing method for semiconductor device
Provided is a method of producing a semiconductor device having a structure wherein a semiconductor chip 3 is mounted on a wiring circuit substrate 2 and sealed with a resin. A wiring circuit substrate 2 having a connecting conductor portion that can be connected to an electrode of the chip is formed on a metal support layer 1 in a way such that the substrate can be separated from the metal support layer, the chip 3 is mounted on the wiring circuit substrate 2, a sheet-shaped resin composition T is placed on the chip and heated on the chip to seal the chip, and the metal support layer is separated and divided to obtain individual semiconductor devices.
1. A method of producing a semiconductor device having a structure wherein a semiconductor chip is mounted on a wiring circuit substrate and sealed with a resin, wherein the method comprises the steps of:
forming a wiring circuit substrate having, on a metal support layer, a connecting conductor portion that can be connected to an electrode of the semiconductor chip in a way such that the wiring circuit substrate can be separated from the metal support layer, and such that the connecting conductor portion is located on the upper face side of the wiring circuit substrate,
connecting the connecting conductor portion of the wiring circuit substrate and the electrode of the semiconductor chip to mount the semiconductor chip on the wiring circuit substrate,
placing a sheet-shaped resin composition made of a sealing resin composition on the semiconductor chip mounted on the wiring circuit substrate, heating the sheet-shaped resin composition to seal the semiconductor chip with the sealing resin composition, and
separating the metal support layer from the wiring circuit substrate after sealing.
2. The manufacturing method according to claim 1 , wherein the sheet-shaped resin composition is a sheet-shaped epoxy resin composition containing an epoxy resin, a phenol resin, an elastomer, an inorganic filler, and a curing promoter as ingredients.
3. The manufacturing method according to claim 2 , wherein a release layer is present between the metal support layer and the wiring circuit substrate, whereby the wiring circuit substrate can be separated from the metal support layer.
4. The manufacturing method according to claim 3 , wherein the release layer is made of polyimide.
5. The manufacturing method according to claim 3 , wherein the release layer is made of one material selected from among metal, metal oxide, and inorganic oxide.
6. The manufacturing method according to claim 1 , wherein a release layer is present between the metal support layer and the wiring circuit substrate, whereby the wiring circuit substrate can be separated from the metal support layer.
7. The manufacturing method according to claim 6 , wherein the release layer is made of polyimide.
8. The manufacturing method according to claim 6 , wherein the release layer is made of one material selected from among metal, metal oxide, and inorganic oxide.