Electrophoretic display device and method for fabricating the same
View Patent ↗Disclosed is an electrophoretic display device and a fabrication method thereof, and the electrophoretic display device may include a thin-film transistor formed on a lower substrate, a pixel electrode connected to the thin-film transistor, side electrodes formed at periphery of the pixel electrode, a partition wall formed on the side electrode, fluid including an electrophoretic particles formed between the partition walls, and an upper substrate adhered on the lower substrate and formed with a common electrode on the rear surface thereof.
1. An electrophoretic display device, the device comprising:
thin-film transistors (TFTs) formed in a matrix form on a lower substrate having a pixel region in which are arranged unit pixel regions;
a passivation layer covering the lower substrate on which is formed the thin-film transistors;
pixel electrodes formed on the passivation layer and connected to the thin-film transistors, respectively;
a TFT blocking pattern formed on the pixel electrode at an upper portion of each of the thin-film transistors (TFTs);
a side electrode formed on the passivation layer and enclosing the pixel electrodes and spaced with the pixel electrodes, wherein the side electrode is formed in one body on the passivation layer;
a partition wall between the pixel electrodes and dividing the pixel region into the unit pixel region;
a fluid including an electrophoretic particles filled between the partition wall; and
an upper substrate attached with the lower substrate and formed with a common electrode on a lower surface thereof,
wherein the TFT blocking pattern and the side electrode are formed of the same conductive metal material.
2. The device of claim 1 , the partition wall is formed on the side electrode.
3. The device of claim 1 , the side electrode is formed at between the pixel electrode and the partition wall.
4. The device of claim 1 , wherein the side electrodes are formed by selecting any one of Al-based metals including Al and Al alloy, Ag-based metals including Ag and Ag alloy, Mo-based metals including Mo and Mo alloy, Cr, Ti, and Ta.
5. The device of claim 1 , wherein the partition wall is formed by using any one of negative photosensitive resin, dry film, acrylic resin, polymer, and sealant.
6. The device of claim 1 , wherein the side electrode is used for preventing a mixture of particles in implanting fluid or for refresh in driving.
7. The device of claim 1 , wherein the electrophoretic particles are composed of color particles, white particles, or composed of white particles, black particles.
8. A method of fabricating an electrophoretic display device, the method comprising:
forming thin-film transistors in a matrix form on a lower substrate having a pixel region in which are arranged unit pixel regions;
forming a passivation layer covering the thin-film transistors;
forming pixel electrodes on the passivation layer and connected to the thin-film transistors, respectively;
forming a TFT blocking pattern on the pixel electrode at an upper portion of each of the thin-film transistors (TFTs);
forming a side electrode on the passivation layer and enclosing the pixel electrodes and spaced with the pixel electrodes, wherein the side electrode is formed in one body on the passivation layer;
forming a partition wall dividing the pixel region into the unit pixel regions and formed at between the pixel electrodes on the passivation layer;
filling a fluid including electrophoretic particles between the partition wall; and
attaching an upper substrate on the lower substrate, the upper substrate is provided with a common electrode on a lower surface thereof,
wherein the TFT blocking pattern and the side electrode are comprised of the same conductive metal layer, and the TFT blocking pattern and the side electrode are simultaneously formed.
9. The method of claim 8 , wherein the partition wall is formed on the side electrode.
10. The method of claim 8 , the partition wall is formed at peripheral of the side electrode and on the passivation layer.
11. The method of claim 8 , wherein the side electrode is formed by selecting any one of Al-based metals including Al, an Al alloy, Ag-based metals including Ag, an Ag alloy, Mo-based metals including Mo, a Mo alloy, Cr, Ti, and Ta.
12. The method of claim 8 , wherein the partition wall is formed by using any one of negative photosensitive resin, dry film, acrylic resin, polymer, and sealant.
13. The method of claim 8 , wherein the side electrode is used for preventing a mixture of particles in implanting fluid or for refresh in driving.
14. The method of claim 8 , wherein the electrophoretic particles are composed of color particles, white particles or composed of white particles, black particles.
15. The method of claim 8 , wherein the partition walls are formed using a photolithographic process or roll printing method.
16. The method of claim 8 , wherein the fluid is filled by using any one of die coating, casting, bar coating, dispense, squeezing, inkjet printing, and screen printing processes.