Silicon nitride light pipes for image sensors
View Patent ↗Various embodiments for etching of silicon nitride (Si x N y ) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.
1. A method comprising:
forming an etch mask on a silicon nitride layer provided on a wafer; and
forming a pillar with an aspect ratio of 3 or more, by etching a sidewall in the silicon nitride layer;
depositing a glass layer on top of the pillar; forming a photodiode element on the wafer; and applying the silicon nitride layer on top of the photodiode element; wherein the wafer is a silicon-on-insulator (SOI) wafer in [100] crystal orientation; wherein forming the photodiode element on the wafer comprises etching the wafer around the region which is to become the photodiode element so as to electrically isolate the photodiode element.
2. The method according to claim 1 , wherein the diameter of the pillar is about 4 μm or more.
3. The method according to claim 1 , wherein the height of the pillar is about 8 μm or more.
4. The method according to claim 1 , wherein the cross-sectional shape of the pillar is substantially circular.
5. The method according to claim 1 , wherein the pillar has a sidewall angle of about at least 88 °.
6. The method according to claim 1 , wherein the pillar has a sidewall surface roughness (σ RMS ) of about 50 nm or less.
7. The method according to claim 1 , wherein the silicon nitride has a chemical formula of Si x N y .
8. The method according to claim 7 , wherein the chemical formula is Si 3 N 4 .
9. The method according to claim 1 , wherein the etch mask is sized larger than the pillar so as to provide an etching radius.
10. The method according to claim 9 , wherein the etching radius is about 0.5 μm in the radial inward direction.
11. The method according to claim 1 , wherein the etching comprises reactive ion etching (RIE) including flowing one or more gases to form a pattern in the etch mask.
12. The method according to claim 11 , wherein flowing the one or more gases comprises flowing:
SF 6 gas for isotropically etching the silicon nitride; and
C 4 F 8 gas for anisotropically etching the silicon nitride.
13. The method according to claim 12 , further comprising flowing O 2 gas for removing polymer deposits on the silicon nitride that are formed during the etching process.
14. The method according to claim 12 , wherein the etch ratio of the silicon nitride is between about 2 to 11 μm/hour.
15. The method according to claim 12 , wherein the ratio of the C 4 F 8 to SF 6 gases is between about 0 to 3.0.
16. The method according to claim 1 , further comprising:
forming a metal blocking layer around the pillar.
17. The method according to claim 1 , further comprising:
forming a silicon nitride passivation layer on the SOI wafer.
18. The method according to claim 1 , wherein forming the photodiode element on the wafer comprises:
defining p+ and n+ doping regions on the wafer.
19. A device comprising: a photodetector; a silicon nitride passivation layer directly on the photodetector; a pillar of silicon nitride, configured as a light pipe, directly on the silicon nitride passivation layer; a SiO 2 layer around the pillar; and a light blocking layer directly on the silicon nitride passivation layer, under the SiO 2 layer and around the pillar, the light blocking layer configured to block light not transmitted through the pillar from reaching the photodetector.
20. A method for fabricating a photodiode comprising:
forming an etch mask on a silicon-on-insulator (SOI) wafer so as to define a region;
etching the SOI wafer to form a trench at least partially around the region in an insulating layer of the SOI wafer,
depositing dopants in the region,
depositing a silicon nitride layer on the SOI wafer, and
etching a pillar of silicon nitride on the region from the silicon nitride layer.
21. The method according to claim 20 , wherein the trench is about 4 μm.
22. The method according to claim 21 , wherein the SOI wafer is in the [100] crystal orientation.
23. The device of claim 19 , wherein the photodectector is formed on a silicon-on-insulator (SOI) wafer and, is electrically isolated by the trench formed in an insulator layer of the SOI wafer.
24. The device according to claim 23 , wherein the SOI wafer is in the [100] crystal orientation.
25. The method of claim 1 , wherein the pillar is essentially vertical to the wafer.
26. The device of claim 19 , wherein the pillar is essentially vertical to a wafer.
27. The method of claim 20 , wherein the pillar is essentially vertical to the SOI wafer.
28. The device of claim 19 , wherein the pillar has an aspect ratio of 3 or more.