Method to fabricate a redirecting mirror in optical waveguide devices
View Patent ↗A method of fabricating a turning mirror for an optical device includes the steps of depositing on a substrate, which defines a plane in which an optical signal propagates in a propagating direction, a photoresist layer sensitive to electrons and to UV radiation. The material in which the photoresist layer is formed, has a contrast not larger than 3. A first portion of the photoresist layer is exposed to an electron beam, wherein the electron dose of the electron beam exposure is varied within the first portion according to a selected pattern, and wherein the electron does to which a given region in the photoresist is exposed, depends on the resulting photoresist height in the given region after development. A second portion of the photoresist layer is exposed to UV radiation; the first and the second portions are overlapped at least in a third portion. The photoresist layer is developed so as to form in the third portion of the photoresist layer exposed to both electron beam and to UV radiation a first surface having an angle relative to the propagating direction. The substrate and the photoresist are etched so that a second angled surface is formed in the substrate in correspondence to the third portion. The second surface forms an angle with the propagating direction.
1. A method of forming a turning mirror in a planar substrate defining a substrate plane, the method comprising:
depositing a resist layer on the substrate, the resist layer having a first sensitivity to electrons and a second sensitivity to UV radiation, the second sensitivity being opposite in sign to the first sensitivity;
exposing a portion of the resist layer to an electron beam to form an exposed portion of the resist layer, an electron dose of the electron beam being varied according to a selected pattern such that the electron dose applied to each region in the resist layer corresponds to a desired resist layer thickness of the region after a subsequent developing process;
exposing the exposed portion of the resist layer to UV radiation;
developing at least the exposed portion the resist layer to form an angled resist surface in the resist layer, the angled resist surface having a first angle relative to the substrate plane; and
etching the substrate and the resist layer to form an angled reflecting surface in the substrate, the angled reflecting surface having a second angle relative to the substrate plane.
2. The method according to claim 1 , wherein the resist layer has a contrast not larger than 3 with respect to electron dose variation.
3. The method according to claim 2 , wherein the resist layer has a contrast between 1 and 2 with respect to electron dose variation.
4. The method according to claim 1 , wherein the resist layer has a contrast of about 1 with respect to electron dose variation.
5. The method according to claim 1 , wherein the deposited resist layer has a thickness between 7.5 μm and 10 μm.
6. The method according to claim 1 , wherein the resist layer has an etching selectivity with respect to the substrate not smaller than 2:1.
7. The method according to claim 6 , wherein the etching selectivity is 2:1 to 3:1.
8. The method according to claim 1 , wherein etching the substrate and the resist layer comprises reactive ion etching.
9. The method according to claim 1 , wherein the resist layer is a UV positive, e-beam negative resist layer.
10. The method according to claim 1 , wherein the substrate comprises a silicon-based material.
11. The method according to claim 1 , wherein:
the substrate comprises a waveguide having a core and a cladding; and
depositing the resist layer on the substrate comprises depositing the resist layer on the cladding.
12. The method according to claim 11 , wherein the exposed portion of the resist layer is positioned such that after etching, a signal propagating in the waveguide is reflected by the angled reflecting surface.
13. The method according to claim 1 , wherein the first angle between the angled resist surface and the substrate plane is 20° to 30°.
14. The method according to claim 1 , wherein the second angle between the angled reflecting surface and the substrate plane is 40° to 60°.
15. The method according to claim 1 , further comprising forming a reflective layer on the angled reflecting surface.
16. The method according to claim 15 , wherein the reflective layer includes a metallic layer.
17. The method according to claim 1 , wherein the exposed portion of the resist layer comprises a plurality of adjacent regions, each region being exposed to a substantially uniform electron dose.
18. The method according to claim 17 , wherein each of the plurality of adjacent regions has a constant width.
19. The method according to claim 17 , wherein the electron dose of the adjacent regions varies in a substantially monotonic way along the exposed portion of the resist layer.
20. The method according to claim 1 , wherein exposing a portion of the resist layer to an electron beam comprises:
dividing an exposure field into a plurality of sub-fields having boundaries; and
exposing the portion of the resist layer to the electron beam in a plurality of exposures, the exposure field being shifted between exposures with respect to the resist layer, such that the boundaries of the sub-fields do not overlap in any two exposures.