IP Library Granted Patent US 8,253,494
Granted Patent B2
US 8,253,494 · App. 12/967,084 · Granted Aug 28, 2012

Doherty amplifier with composed transfer characteristic having multiple peak amplifiers

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Quick Facts
Patent No.
US 8,253,494
App. No.
12/967,084
Granted
Aug 28, 2012
Kind
B2
Abstract

A combination amplifier ( 1,1 a ) is provided which comprises a carrier amplifier ( 7,7 a ) and a series connection of a first peak amplifier ( 9,9 a ) and a second peak amplifier ( 11,11 a ) which are provided with a phase-shifted input signal relative to the input signal supplied to the carrier amplifier, wherein a transfer characteristics of the combination amplifier may be optimized by independently adjusting transfer characteristics of the carrier amplifier, the first peak amplifier and the second peak amplifier. Thereby, a linearity and/or an efficiency of the combination amplifier may be improved compared to a conventional Doherty amplifier.

Claims (55)

1. A combination amplifier comprising:

a combination amplifier input terminal;

a combination amplifier output terminal;

a carrier amplifier having a carrier amplifier input terminal and a carrier amplifier output terminal;

a first peak amplifier having a first peak amplifier input terminal and a first peak amplifier output terminal;

a second peak amplifier having a second peak amplifier input terminal and a second peak amplifier output terminal;

an input impedance inverter; and

an output impedance inverter;

wherein one end of the input impedance inverter is connected to the carrier amplifier input terminal and is also connected to the combination amplifier input terminal, and another end of the input impedance inverter is connected to an input mid point to which the first peak amplifier input terminal and the second peak amplifier input terminal are connected;

wherein one end of the output impedance inverter is connected to the carrier amplifier output terminal, and another end of the output impedance inverter is connected to an output mid point to which the first peak amplifier output terminal and the second peak amplifier output terminal are connected and is also connected to the combination amplifier output terminal,

wherein an input signal applied at the combination amplifier input terminal is supplied to the carrier amplifier input terminal without phase shift, whereas the input signal supplied to the combination amplifier input terminal is provided to both the first peak amplifier input terminal and the second peak amplifier input terminal having a phase shift of 90°, and

wherein a first bias voltage is applied to the first peak amplifier input terminal and a second bias voltage is applied to the second peak amplifier input terminal, and the second bias input voltage is greater than the first bias input voltage;

wherein the carrier amplifier, the first peak amplifier, and the second peak amplifier are integrated on a common semiconductor substrate; and

wherein a lateral dimension of the substrate is smaller than a wavelength of a signal applied to the combination amplifier input terminal.

2. The combination amplifier according to claim 1 , wherein at least one of the input impedance inverter and the output impedance inverter comprises a bond wire.

3. The combination amplifier according to claim 1 , wherein the first peak amplifier output terminal and the second peak amplifier output terminal are connected to a common metal bar.

4. The combination amplifier according to claim 1 , wherein each the carrier amplifier, the first peak amplifier, and the second peak amplifier comprises at least one transistor which is one of a FET, a JFET, a MOSFET, a LDMOS, a GaN HEMT, and a bipolar junction transistor.

5. The combination amplifier according to claim 4 , wherein the at least one transistor of the first peak amplifier and the at least one transistor of the second peak amplifier are of a same type.

6. The combination amplifier according to claim 4 , wherein a gate width of the at least one transistor of the first peak amplifier is different from a gate width of the at least one transistor of the second peak amplifier.

7. The combination amplifier according to claim 4 , wherein the at least one transistor of the first peak amplifier and the at least one transistor of the second peak amplifier have different threshold voltages above which their gates conduct.

8. The combination amplifier according claim 4 , wherein the at least one transistor of the first peak amplifier is has a first transconductance and the at least one transistor of the second peak amplifier has a second transconductance, and the second transconductance is greater than the first transconductance.

9. The combination amplifier according to claim 8 , wherein the at least one transistor of the carrier amplifier has a carrier transconductance, and the carrier transconductance is smaller than the first transconductance.

10. The combination amplifier according to claim 9 , wherein the carrier transconductance, the first transconductance, the second transconductance, the first bias voltage, and the second bias voltage are such that an output current supplied to the combination amplifier output terminal depends on a square of an input voltage applied to the combination amplifier input terminal.

11. The combination amplifier according to claim 1 , wherein the first peak amplifier and the second peak amplifier input terminals are connected to the input mid point via a plurality of capacitors.

12. The combination amplifier according to claim 1 , wherein at least one of the input mid point, the output mid point, and the carrier input terminal are connected to a LC compensation network.

13. A combination amplifier comprising:

a combination amplifier input terminal;

a combination amplifier output terminal;

a carrier amplifier having a carrier amplifier input terminal and a carrier amplifier output terminal;

a first peak amplifier having a first peak amplifier input terminal and a first peak amplifier output terminal;

a second peak amplifier having a second peak amplifier input terminal and a second peak amplifier output terminal;

an input impedance inverter; and

an output impedance inverter;

wherein one end of the input impedance inverter is connected to the carrier amplifier input terminal and is also connected to the combination amplifier input terminal, and another end of the input impedance inverter is connected to an input mid point to which the first peak amplifier input terminal and the second peak amplifier input terminal are connected;

wherein one end of the output impedance inverter is connected to the carrier amplifier output terminal, and another end of the output impedance inverter is connected to an output mid point to which the first peak amplifier output terminal and the second peak amplifier output terminal are connected and is also connected to the combination amplifier output terminal,

wherein an input signal applied at the combination amplifier input terminal is supplied to the carrier amplifier input terminal without phase shift, whereas the input signal supplied to the combination amplifier input terminal is provided to both the first peak amplifier input terminal and the second peak amplifier input terminal having a phase shift of 90°, and

wherein a first bias voltage is applied to the first peak amplifier input terminal and a second bias voltage is applied to the second peak amplifier input terminal, and the second bias input voltage is greater than the first bias input voltage;

wherein each the carrier amplifier, the first peak amplifier, and the second peak amplifier comprises at least one transistor which is one of a FET, a JFET, a MOSFET, a LDMOS, a GaN HEMT, and a bipolar junction transistor; and

wherein a gate width of the at least one transistor of the first peak amplifier is different from a gate width of the at least one transistor of the second peak amplifier.

14. A combination amplifier comprising:

a combination amplifier input terminal;

a combination amplifier output terminal;

a carrier amplifier having a carrier amplifier input terminal and a carrier amplifier output terminal;

a first peak amplifier having a first peak amplifier input terminal and a first peak amplifier output terminal;

a second peak amplifier having a second peak amplifier input terminal and a second peak amplifier output terminal;

an input impedance inverter; and

an output impedance inverter;

wherein one end of the input impedance inverter is connected to the carrier amplifier input terminal and is also connected to the combination amplifier input terminal, and another end of the input impedance inverter is connected to an input mid point to which the first peak amplifier input terminal and the second peak amplifier input terminal are connected;

wherein one end of the output impedance inverter is connected to the carrier amplifier output terminal, and another end of the output impedance inverter is connected to an output mid point to which the first peak amplifier output terminal and the second peak amplifier output terminal are connected and is also connected to the combination amplifier output terminal,

wherein an input signal applied at the combination amplifier input terminal is supplied to the carrier amplifier input terminal without phase shift, whereas the input signal supplied to the combination amplifier input terminal is provided to both the first peak amplifier input terminal and the second peak amplifier input terminal having a phase shift of 90°, and

wherein a first bias voltage is applied to the first peak amplifier input terminal and a second bias voltage is applied to the second peak amplifier input terminal, and the second bias input voltage is greater than the first bias input voltage;

wherein each the carrier amplifier, the first peak amplifier, and the second peak amplifier comprises at least one transistor which is one of a FET, a JFET, a MOSFET, a LDMOS, a GaN HEMT, and a bipolar junction transistor; and

wherein the at least one transistor of the first peak amplifier is has a first transconductance and the at least one transistor of the second peak amplifier has a second transconductance, and the second transconductance is greater than the first transconductance.

15. The combination amplifier according to claim 14 , wherein the at least one transistor of the carrier amplifier has a carrier transconductance, and the carrier transconductance is smaller than the first transconductance.

16. The combination amplifier according to claim 15 , wherein the carrier transconductance, the first transconductance, the second transconductance, the first bias voltage, and the second bias voltage are such that an output current supplied to the combination amplifier output terminal depends on a square of an input voltage applied to the combination amplifier input terminal.

Assignments (13)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
PATENT RELEASE Recorded Aug 17, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 039707/0471 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
CHANGE OF NAME Recorded Feb 22, 2016
From: SAMBA HOLDCO NETHERLANDS B.V.
To: AMPLEON NETHERLANDS B.V.
Reel/Frame 037876/0873 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2015
From: NXP B.V.
To: SAMBA HOLDCO NETHERLANDS B.V.
Reel/Frame 036630/0574 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 14, 2010
From: BLEDNOV, IGOR
To: NXP B.V.
Reel/Frame 025488/0164 →