Method for fabricating a sensor
View Patent ↗A method for fabricating a sensor is disclosed that in one embodiment bonds a first device wafer to an etched second device wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element that is in electrical communication with an outer surface of the sensor through an interconnect embedded in a device layer of the first device wafer. In one embodiment the suspended structure is enclosed by a cap and the sensor is configured to measure absolute pressure.
1. A method for fabricating a sensor comprising the steps of:
forming an interconnect window in a top surface of a first device layer of a first device wafer, said first device wafer comprising said first device layer, a first insulator layer, and a first handle layer, said first insulator layer located between said first device layer and said first handle layer;
placing an interconnect in said first device layer, said interconnect comprising spaced apart inner and outer interconnects located in said first device layer proximate a portion of said top surface, a lower interconnect located proximate a portion of said interconnect window, an inner interconnect feedthrough connecting said inner interconnect and said lower interconnect, and an outer interconnect feedthrough connecting said outer interconnect and said lower interconnect;
forming a diaphragm cavity in a top surface of a second device layer of a second device wafer;
bonding said top surface of said first device layer to said top surface of said second device layer forming a diaphragm over said diaphragm cavity;
removing said first handle layer and said first insulator layer from said first device wafer;
placing a sensing element in said first device layer in relation to said diaphragm to sense flexure in said diaphragm; and
placing a cap over said diaphragm.
2. The method for fabricating a sensor of claim 1 , wherein said step of placing an interconnect in said first device layer comprises a plurality of independent, contiguous steps for placing said inner interconnect, outer interconnect, lower interconnect, inner interconnect feedthrough, and outer interconnect feedthrough.
3. The method for fabricating a sensor of claim 1 , wherein said step of placing an interconnect in said first device layer comprises a plurality of independent, non-contiguous steps for placing said inner interconnect, outer interconnect, lower interconnect, inner interconnect feedthrough, and outer interconnect feedthrough.
4. The method for fabricating a sensor of claim 1 , further comprising the step of forming a metallization layer that provides electrical communication between an outer surface of said sensor and said interconnect.
5. The method for fabricating a sensor of claim 1 , wherein said sensing element is a piezoresistive sensing element.
6. The method for fabricating a sensor of claim 1 , wherein said second device wafer comprises a double side polished semiconductor wafer.
7. The method for fabricating a sensor of claim 1 , wherein said second device wafer comprises a second device layer, a second insulator layer, and a second handle layer, wherein said second insulator layer is located between said second device layer and said second handle layer.
8. The method for fabricating a sensor of claim 7 , further comprising the step of removing said second handle layer and said second insulator layer from said second device wafer.
9. The method for fabricating a sensor of claim 1 , wherein said sensor measures absolute pressure.
10. The method for fabricating a sensor of claim 1 , wherein said cap is glass.
11. A method for fabricating a sensor comprising the steps of:
forming an interconnect window in a top surface of a first device layer of a first device wafer, said first device wafer comprising said first device layer, a first insulator layer, and a first handle layer, said first insulator layer located between said first device layer and said first handle layer;
placing an inner lower interconnect feedthrough and an outer lower interconnect feedthrough below said interconnect window in said first device layer in a spaced-apart configuration;
placing a lower interconnect between said interconnect window and said inner and outer lower interconnect feedthroughs in said first device layer, said lower interconnect being in electrical communication with said inner and outer lower interconnect feedthroughs;
forming a diaphragm cavity in a top surface of a second device layer of a second device wafer;
bonding said top surface of said first device layer to said top surface of said second device layer forming a diaphragm over said diaphragm cavity;
removing said first handle layer and said first insulator layer from said first device wafer;
placing an inner upper interconnect feedthrough and an outer upper interconnect feedthrough between said top surface of said first device layer and said inner and outer lower interconnect feedthroughs, said inner upper interconnect feedthrough being in electrical communication with said inner lower interconnect feedthrough and said outer upper interconnect feedthrough being in electrical communication with said outer lower interconnect feedthrough;
placing a sensing element in said first device layer in relation to said diaphragm to sense flexure in said diaphragm;
placing an inner interconnect in said first device layer in electrical communication with said sensing element and said inner upper interconnect feedthrough;
placing an outer interconnect in said first device layer in electrical communication with said upper outer interconnect feedthrough; and
placing a cap over said diaphragm.
12. The method for fabricating a sensor of claim 11 , further comprising the step of forming a metallization layer that provides electrical communication between an outer surface of said sensor and said outer interconnect.
13. The method for fabricating a sensor of claim 11 , wherein said sensing element is a piezoresistive sensing element.
14. The method for fabricating a sensor of claim 11 , wherein said second device wafer comprises a double side polished semiconductor wafer.
15. The method for fabricating a sensor of claim 11 , wherein said second device wafer comprises a second device layer, a second insulator layer, and a second handle layer, wherein said second insulator layer is located between said second device layer and said second handle layer.
16. The method for fabricating a sensor of claim 15 , further comprising the step of removing said second handle layer and said second insulator layer from said second device wafer.
17. The method for fabricating a sensor of claim 11 , wherein said sensor measures absolute pressure.
18. The method for fabricating a sensor of claim 11 , wherein the thickness of said device layer determines the sensitivity of said sensor.
19. The method for fabricating a sensor of claim 11 , wherein said cap is glass.
20. The method for fabricating a sensor of claim 11 , wherein said steps of placing said sensing element, said inner interconnect, and said outer interconnect are performed at the same time.