OPTICAL APERTURES AND APPLICATIONS THEREOF
In one aspect, the present invention provides wafer level optical assemblies comprising one or more optical apertures spaced apart from optical wafers and/or optical wafer substrates. In some embodiments, a wafer level assembly described herein comprises a first wafer comprising a first perforation and a first aperture aligned with the first perforation and coupled to the first wafer.
1 . A wafer level assembly comprising:
a first wafer comprising a first perforation; and
a first aperture aligned with the first perforation and coupled to the first wafer.
2 . The wafer level assembly of claim 1 , wherein the first wafer is non-radiation transmissive.
3 . The wafer level assembly of claim 1 , wherein the first wafer comprises a fiber reinforced polymeric material.
4 . The wafer level assembly of claim 1 further comprising an optical wafer coupled to the first wafer, the optical wafer comprising a first optical element aligned with the first aperture and spaced apart from the first aperture by the first wafer.
5 . The wafer level assembly of claim 4 , further comprising a second wafer comprising a first perforation aligned with the first aperture, the second wafer coupled to one of the first wafer and the optical wafer.
6 . The wafer level assembly of claim 5 , wherein the second wafer is non-radiation transmissive.
7 . The wafer level assembly of claim 5 further comprising an electro-optical element wafer coupled to the second wafer such that the first aperture is disposed between and spaced apart from the first optical element and the electro-optical element wafer.
8 . The wafer level assembly of claim 5 further comprising an electro-optical element wafer coupled to the second wafer such that the first optical element is disposed between and spaced apart from the first aperture and the electro-optical element wafer.
9 . The wafer level assembly of claim 1 further comprising a second wafer comprising a second perforation aligned with the first aperture, the second wafer coupled to the first wafer with the first aperture disposed between the first and second wafers.
10 . The wafer level assembly of claim 1 , wherein the first aperture comprises electroless nickel.
11 . The wafer level assembly of claim 1 , wherein the first aperture comprises a lithographic resist material.
12 . The wafer level assembly of claim 1 , wherein the first aperture comprises a polymeric material.
13 . A wafer level optical assembly comprising:
an optical wafer comprising a first optical element; and
a first aperture aligned with the first optical element and coupled to a surface of the optical wafer, the first aperture comprising electroless nickel.
14 . The wafer level assembly of claim 13 further comprising a spacer wafer comprising a first perforation coupled to the optical wafer, the first perforation aligned with the first optical element.
15 . The wafer level assembly of claim 14 further comprising an electro-optical element wafer coupled to the spacer wafer, the electro-optical element wafer comprising a first electro-optical element aligned with the first optical element.
16 . The wafer level assembly of claim 13 , wherein the optical wafer further comprises a second optical element and a second aperture aligned with the second optical element and coupled to a surface of the optical wafer, the second aperture comprising electroless nickel.
17 . A method of providing at least one optical aperture comprising:
providing a substrate comprising a coating;
selectively removing portions of the coating from the substrate;
depositing an aperture material on substrate surfaces where the coating has been removed or substantially removed;
coupling a wafer to the deposited aperture material; and
removing the aperture material from the substrate to provide the at least one optical aperture.
18 . The method of claim 17 , wherein the coating comprises an oxide.
19 . The method of claim 17 , wherein the coating comprises a lithographic resist.
20 . The method of claim 17 , wherein the coating comprises a polymeric material.
21 . The method of claim 18 , wherein the substrate comprises silicon, aluminum or titanium.
22 . The method of claim 17 , wherein the aperture material comprises a metal.
23 . The method of claim 22 , wherein the metal comprises electroless nickel.
24 . The method of claim 17 , wherein the aperture material comprises a lithographic resist.
25 . The method of claim 17 , wherein the aperture material comprises a polymeric material.
26 . The method of claim 17 , wherein the substrate and the aperture material have a coefficient of thermal expansion ratio (CTE) greater than 1.
27 . The method of claim 17 , wherein the substrate and the aperture material have a CTE ratio of at least about 5.
28 . The method of claim 17 , wherein the substrate and the aperture material have a CTE ratio of at least about 10.
29 . The method of claim 17 , wherein the wafer coupled to the aperture material comprises a perforation aligned with the at least one aperture.
30 . The method of claim 17 , wherein the wafer comprises a spacer wafer.
31 . The method of claim 17 . wherein the wafer coupled to the aperture material comprises an optical wafer.
32 . The method of claim 31 , wherein the optical wafer comprises an optical element aligned with the at least one aperture.
33 . The method of claim 32 , wherein the substrate comprises a recess operable to accommodate the optical element.
34 . The method of claim 17 , wherein removing the aperture material comprises heating the substrate to release the aperture material coupled to wafer.
35 . A method of providing at least one optical aperture comprising:
providing a substrate;
patterning an aperture material on the substrate;
coupling a wafer to the patterned aperture material; and
removing the aperture material from the substrate to provide the at least one optical aperture.
36 . The method of claim 35 wherein patterning an aperture material comprises depositing the aperture material on the substrate and selectively removing portions of the aperture material.
37 . The method of claim 36 , wherein the substrate does not comprise a coating.
38 . The method of claim 35 , wherein the aperture material comprises a polymeric material.
39 . The method of claim 35 , wherein the aperture material comprises a lithographic resist.
40 . The method of claim 35 , wherein the substrate and the aperture material have a CTE ratio greater than 1.
41 . The method of claim 35 , wherein the substrate and the aperture material have a CTE ratio of at least about 5.
42 . The method of claim 35 , wherein the substrate and the aperture material have a CTE ratio of at least about 10.
43 . The method of claim 35 , wherein removing the aperture material comprises heating the substrate to release the aperture material coupled to wafer.