Electro-optical device and electronic apparatus
Provided is an electro-optical device including: a first conduction layer; and a second conduction layer which is disposed on the upper layer side of the first conduction layer with an insulation film interposed therebetween so that at least a part thereof overlaps with the first conduction layer in the plan view, wherein the insulation film is provided with a void portion formed in an area where the first conduction layer and the second conduction layer overlap with each other in the plan view.
1. An electro-optical device comprising:
a transistor;
a first insulation film that is disposed so as to cover the transistor;
a first conduction layer that is disposed so as to oppose to the transistor via the first insulation film;
a second conduction layer that overlaps with the first conduction layer at an overlapping area seen from a direction from the second conduction layer to the first conduction layer; and
a second insulation film that is disposed between the first conduction layer and the second conduction layer, the second insulation film having a void at the overlapping area, the void being included in the overlapping area seen from a direction from the second conduction layer to the first conduction layer, wherein
the first conduction layer includes a signal line, an image signal being supplied to the signal line, and
the second conduction layer including a fixed potential side electrode of a capacitance element.
2. An electronic apparatus comprising:
the electro-optical device according to claim 1 .
3. An electro-optical device comprising:
a transistor;
a data line that is electrically connected to the transistor, an image signal being supplied to the data line;
a pixel electrode, the image signal being applied to the pixel electrode via the transistor;
a capacitance element that is electrically connected to the pixel electrode; and
a capacitance line that is electrically connected to a fixed potential side electrode of the capacitance element, the capacitance line extending as to overlap with the data line;
a first insulation film that is disposed between the transistor and the data line;
a second insulation film that is disposed between the data line and the capacitance line,
the second insulation film having a void at an overlapping area seen from a direction from the capacitance line to the data line, the void being included in the overlapping area seen from the direction from the capacitance line to the data line.
4. The electro-optical device according to claim 3 , further comprising:
a plurality of voids that is disposed at the overlapping area seen from the direction from the capacitance line to the data line, the plurality of voids including the void.
5. The electro-optical device according to claim 4 , wherein
each of the plurality of voids are arranged along the data line.
6. The electro-optical device according to claim 3 , further comprising:
a plurality of voids that is disposed at the overlapping area seen from the direction from the capacitance line to the data line.
7. An electro-optical device comprising:
a transistor;
a first insulation film that is disposed so as to cover the transistor;
a first conduction layer that is disposed so as to oppose to the transistor via the first insulation film;
a second conduction layer that overlaps with the first conduction layer at an overlapping area seen from a direction from the second conduction layer to the first conduction layer; and
a second insulation film that is disposed between the first conduction layer and the second conduction layer, the second insulation film having a void at the overlapping area, the void being included in the overlapping area seen from a direction from the second conduction layer to the first conduction layer,
wherein the first conduction layer is a signal line that supplies image signals, and
wherein the second conduction layer is a capacitance line that includes a fixed potential side electrode constituting a capacitance element.