Temporally variable deposition rate of CdTe in apparatus and process for continuous deposition
View Patent ↗Apparatus is generally provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate. The apparatus includes a distribution plate disposed below the distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through the apparatus. The distribution plate defines a pattern of passages therethrough configured to provide greater resistance to the flow of sublimated source vapors at a first longitudinal end than a second longitudinal end. A process for vapor deposition of a sublimated source material to form thin film on a photovoltaic module substrate is also provided via distributing the sublimated source material onto an upper surface of the substrates through a distribution plate positioned between the upper surface of the substrate and the receptacle.
1. An apparatus for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate, said apparatus comprising:
a deposition head;
a receptacle disposed in said deposition head, said receptacle configured for receipt of a granular source material;
a heated distribution manifold disposed below said receptacle, said heated distribution manifold configured to heat said receptacle to a degree sufficient to sublimate source material within said receptacle; and,
a distribution plate disposed below said distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through said apparatus, said distribution plate defining a pattern of passages therethrough, and wherein the pattern of passages is configured to provide greater resistance to the flow of sublimated source vapors at a first longitudinal end where the substrate enters the apparatus than at a second longitudinal end where the substrate exits the apparatus.
2. The apparatus as in claim 1 , wherein the passages have an increasing average area in a longitudinal direction parallel to a direction of travel of the substrates such that the average area of the passages along the first longitudinal end of the distribution plate is smaller than the average area of the passages along the second longitudinal end of the distribution plate.
3. The apparatus as in claim 2 , wherein the increase in average areas of the passages is a substantially linear increase.
4. The apparatus as in claim 1 , wherein the passages have an increasing average area in a step-wise pattern through a plurality of sections forming a sectional distribution plate such that the average area of the passages along the first longitudinal end of the distribution plate is smaller than the average area of the passages along the second longitudinal end of the distribution plate.
5. The apparatus as in claim 4 , wherein the pattern of passages defines a first section of first passages, a second section of second passages, and a third section of third passages, wherein the first section is adjacent to the first longitudinal end, the second section is positioned between the first and third sections, and the third section is adjacent to the second longitudinal end, and wherein second passages have an average area that is larger than an average area of the first passages and the third passages have an average area that is larger than an average area of the second passages.
6. The apparatus as in claim 5 , wherein the average area of the second passages is about 1.1 to about 2.5 times larger than the average area of the first passages, and wherein the average area of the third passages is about 1.1 to about 2.5 times larger than the average area of the second passages.
7. The apparatus as in claim 1 , wherein the pattern of passages has an increasing passage density in the longitudinal direction parallel to the direction of travel of the substrates such that a first passage density adjacent to the first longitudinal end is less than a second passage density adjacent to the second longitudinal end.
8. The apparatus as in claim 7 , wherein the passages have substantially the same average area throughout the distribution plate.
9. The apparatus as in claim 7 , wherein the pattern of passages has an increasing passage density in the longitudinal direction parallel to the direction of travel of the substrates in a step-wise pattern through the plurality of sections such that a first passage density adjacent to the first longitudinal end is less than a second passage density adjacent to the second longitudinal end.
10. The apparatus as in claim 7 , wherein the increase in pattern density of the passages is a substantially linear increase.
11. An apparatus for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate, said apparatus comprising:
a deposition head;
a receptacle disposed in said deposition head, said receptacle configured for receipt of a granular source material;
a heated distribution manifold disposed below said receptacle, said heated distribution manifold configured to heat said receptacle to a degree sufficient to sublimate source material within said receptacle;
a first distribution plate disposed below said distribution manifold, wherein the first distribution plate defines a first pattern of passages therethrough; and,
a second distribution plate disposed below the first distribution plate and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through said apparatus, said second distribution plate defining a second pattern of passages therethrough, and wherein the pattern of passages is configured to provide greater resistance to the flow of sublimated source vapors at a first longitudinal end where the substrate enters the apparatus than at a second longitudinal end where the substrate exits the apparatus.
12. The apparatus as in claim 11 , further comprising:
a plurality of diffusion compartments between the first distribution plate and the second distribution plate corresponding to a plurality of sections defined in the second distribution plate.
13. The apparatus as in claim 12 , wherein adjacent diffusion compartments are separated by an internal wall extending in a traverse direction substantially perpendicular to the longitudinal direction.
14. The apparatus as in claim 13 , wherein the second pattern defines passages having an increasing average area in a step-wise pattern through the plurality of sections such that the average area of the passages along the first longitudinal end of the second distribution plate is smaller than the average area of the passages along the second longitudinal end of the second distribution plate.
15. The apparatus as in claim 13 , wherein the second pattern has an increasing passage density in the longitudinal direction parallel to the direction of travel of the substrates in a step-wise pattern through the plurality of sections such that a first passage density adjacent to the first longitudinal end is less than a second passage density adjacent to the second longitudinal end.